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Discrete Semiconductors

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Discrete Semiconductors
(59) Bridge Rectifiers
(103) IGBTs
(265) MOSFETs
(190) Schottky Diodes & Rectifiers
(20) Switching Diodes
(118) Thyristors
(2) TRIACs
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N-Channel MOSFET, 37 A, 800 V, 4-Pin SOT-227 IXYS IXFN44N80Q3
  • MYR284.20Each
N-Channel MOSFET, 37 A, 800 V, 4-Pin SOT-227 IXYS IXFN44N80Q3
  • Channel TypeN
  • Maximum Continuous Drain Current37 A
  • Maximum Drain Source Voltage800 V
  • Package TypeSOT-227B
  • SeriesHiperFET, Q3-Class
See similar products in MOSFETs
IXYS IXYH82N120C3 IGBT, 200 A 1200 V, 3-Pin TO-247, Through Hole
  • MYR82.744
    Each (In a Tube of 30)
IXYS IXYH82N120C3 IGBT, 200 A 1200 V, 3-Pin TO-247, Through Hole
  • Maximum Continuous Collector Current200 A
  • Maximum Collector Emitter Voltage1200 V
  • Maximum Gate Emitter Voltage±20V
  • Maximum Power Dissipation1.25 kW
  • Package TypeTO-247
See similar products in IGBTs
IXYS IXGH48N60B3 IGBT, 280 A 600 V, 3-Pin TO-247, Through Hole
  • MYR60.411
    Each (In a Tube of 60)
IXYS IXGH48N60B3 IGBT, 280 A 600 V, 3-Pin TO-247, Through Hole
  • Maximum Continuous Collector Current280 A
  • Maximum Collector Emitter Voltage600 V
  • Maximum Gate Emitter Voltage±20V
  • Maximum Power Dissipation300 W
  • Package TypeTO-247
See similar products in IGBTs
N-Channel MOSFET, 44 A, 500 V, 3-Pin TO-247AD IXYS IXFH44N50P
  • MYR50.58Each
  • Also available in industry standard packaging
N-Channel MOSFET, 44 A, 500 V, 3-Pin TO-247AD IXYS IXFH44N50P
  • Channel TypeN
  • Maximum Continuous Drain Current44 A
  • Maximum Drain Source Voltage500 V
  • SeriesHiperFET, Polar
  • Package TypeTO-247AD
See similar products in MOSFETs
IXYS MCC56-16IO1B, Dual Thyristor Module 1600V, 64A 100mA
  • MYR167.95Each
IXYS MCC56-16IO1B, Dual Thyristor Module 1600V, 64A 100mA
  • Rated Average On-State Current64A
  • Thyristor TypeSCR Module
  • Package TypeTO-240AA
  • Repetitive Peak Reverse Voltage1600V
  • Surge Current Rating1.6kA
See similar products in Thyristors
IXYS MCD162-16IO1, Thyristor Module 1600V, 190A 150mA
  • MYR319.86Each
IXYS MCD162-16IO1, Thyristor Module 1600V, 190A 150mA
  • Rated Average On-State Current190A
  • Thyristor TypeSCR Module
  • Package TypeY4 M6
  • Repetitive Peak Reverse Voltage1600V
  • Surge Current Rating6.4kA
See similar products in Thyristors
IXYS MCMA140P1600TA, Dual Thyristor Module 1600V, 140A 200mA
  • MYR265.377
    Each (In a Box of 6)
IXYS MCMA140P1600TA, Dual Thyristor Module 1600V, 140A 200mA
  • Rated Average On-State Current140A
  • Thyristor TypeSCR Module
  • Package TypeTO-240
  • Repetitive Peak Reverse Voltage1600V
  • Surge Current Rating2.59kA
See similar products in Thyristors
N-Channel MOSFET, 74 A, 200 V, 3-Pin TO-247 IXYS IXFH74N20P
  • MYR35.01Each
  • Also available in industry standard packaging
N-Channel MOSFET, 74 A, 200 V, 3-Pin TO-247 IXYS IXFH74N20P
  • Channel TypeN
  • Maximum Continuous Drain Current74 A
  • Maximum Drain Source Voltage200 V
  • Package TypeTO-247
  • SeriesHiperFET, Polar
See similar products in MOSFETs
N-Channel MOSFET, 36 A, 300 V, 3-Pin TO-220 IXYS IXTP36N30P
  • MYR20.31Each
  • Also available in industry standard packaging
N-Channel MOSFET, 36 A, 300 V, 3-Pin TO-220 IXYS IXTP36N30P
  • Channel TypeN
  • Maximum Continuous Drain Current36 A
  • Maximum Drain Source Voltage300 V
  • Package TypeTO-220
  • SeriesHiperFET, Polar
See similar products in MOSFETs
N-Channel MOSFET, 36 A, 600 V, 3-Pin TO-247 IXYS IXFH36N60P
  • MYR55.95Each
  • Also available in industry standard packaging
N-Channel MOSFET, 36 A, 600 V, 3-Pin TO-247 IXYS IXFH36N60P
  • Channel TypeN
  • Maximum Continuous Drain Current36 A
  • Maximum Drain Source Voltage600 V
  • SeriesHiperFET, Polar
  • Package TypeTO-247
See similar products in MOSFETs
IXYS Switching Diode, 2-Pin TO-220AC DSEP15-06A
  • MYR10.65
    Each (In a Tube of 50)
IXYS Switching Diode, 2-Pin TO-220AC DSEP15-06A
  • Diode ConfigurationSingle
  • Mounting TypeThrough Hole
  • Number of Elements per Chip1
  • Package TypeTO-220AC
  • Diode TechnologySilicon Junction
See similar products in Switching Diodes
IXYS IXGH48N60B3 IGBT, 280 A 600 V, 3-Pin TO-247, Through Hole
  • MYR77.625
    Each (In a Pack of 2)
  • Also available in industry standard packaging
IXYS IXGH48N60B3 IGBT, 280 A 600 V, 3-Pin TO-247, Through Hole
  • Maximum Continuous Collector Current280 A
  • Maximum Collector Emitter Voltage600 V
  • Maximum Gate Emitter Voltage±20V
  • Maximum Power Dissipation300 W
  • Package TypeTO-247
See similar products in IGBTs
N-Channel MOSFET, 36 A, 600 V, 3-Pin TO-247 IXYS IXFH36N60P
  • MYR51.424
    Each (In a Tube of 30)
N-Channel MOSFET, 36 A, 600 V, 3-Pin TO-247 IXYS IXFH36N60P
  • Channel TypeN
  • Maximum Continuous Drain Current36 A
  • Maximum Drain Source Voltage600 V
  • Package TypeTO-247
  • SeriesHiperFET, Polar
See similar products in MOSFETs
IXYS MCD162-16IO1, Thyristor Module 1600V, 190A 150mA
  • MYR315.425
    Each (In a Box of 6)
IXYS MCD162-16IO1, Thyristor Module 1600V, 190A 150mA
  • Rated Average On-State Current190A
  • Thyristor TypeSCR Module
  • Package TypeY4 M6
  • Repetitive Peak Reverse Voltage1600V
  • Surge Current Rating6.4kA
See similar products in Thyristors
IXYS MCC132-08io1, Dual Thyristor Module 800V, 130A 150mA
  • MYR451.26Each
IXYS MCC132-08io1, Dual Thyristor Module 800V, 130A 150mA
  • Rated Average On-State Current130A
  • Thyristor TypeSCR Module
  • Package TypeY4 M6
  • Repetitive Peak Reverse Voltage800V
  • Surge Current Rating5.08kA
See similar products in Thyristors
IXYS 1800V 7A, Silicon Junction Diode, 2-Pin DSA2-18A
  • MYR59.85Each
IXYS 1800V 7A, Silicon Junction Diode, 2-Pin DSA2-18A
  • Mounting TypeThrough Hole
  • Maximum Continuous Forward Current7A
  • Peak Reverse Repetitive Voltage1800V
  • Diode ConfigurationSingle
  • Diode TypeSilicon Junction
See similar products in Schottky Diodes & Rectifiers
IXYS IXYH82N120C3 IGBT, 200 A 1200 V, 3-Pin TO-247, Through Hole
  • MYR91.30Each
  • Also available in industry standard packaging
IXYS IXYH82N120C3 IGBT, 200 A 1200 V, 3-Pin TO-247, Through Hole
  • Maximum Continuous Collector Current200 A
  • Maximum Collector Emitter Voltage1200 V
  • Maximum Gate Emitter Voltage±20V
  • Maximum Power Dissipation1.25 kW
  • Package TypeTO-247
See similar products in IGBTs
IXYS MCC95-12io1B, Dual Thyristor Module 1200V, 116A 150mA
  • MYR178.51Each
IXYS MCC95-12io1B, Dual Thyristor Module 1200V, 116A 150mA
  • Rated Average On-State Current116A
  • Thyristor TypeSCR Module
  • Package TypeTO-240AA
  • Repetitive Peak Reverse Voltage1200V
  • Surge Current Rating2.4kA
See similar products in Thyristors
N-Channel MOSFET, 88 A, 300 V, 3-Pin TO-247 IXYS IXFH88N30P
  • MYR66.60Each
  • Also available in industry standard packaging
N-Channel MOSFET, 88 A, 300 V, 3-Pin TO-247 IXYS IXFH88N30P
  • Channel TypeN
  • Maximum Continuous Drain Current88 A
  • Maximum Drain Source Voltage300 V
  • Package TypeTO-247
  • SeriesHiperFET, Polar
See similar products in MOSFETs
IXYS IXGH24N170 IGBT, 50 A 1700 V, 3-Pin TO-247AD, Through Hole
  • MYR101.23Each
IXYS IXGH24N170 IGBT, 50 A 1700 V, 3-Pin TO-247AD, Through Hole
  • Maximum Continuous Collector Current50 A
  • Maximum Collector Emitter Voltage1700 V
  • Maximum Gate Emitter Voltage±20V
  • Package TypeTO-247AD
  • Mounting TypeThrough Hole
See similar products in IGBTs
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