MOSFETs

MOSFETs, also known as MOSFET transistors, stands for Metal Oxide Semiconductor Field-Effect Transistors. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. It acts very similarly to a switch and is used for switching or amplifying electronic signals.

These semiconductor devices are ICs (integrated circuits) which are mounted onto PCBs. MOSFETs come in a range of standard package types such as DPAK, D2PAK, DFN, I2PAK, SOIC, SOT-223, TO-220 and SOIC.

What are depletion and enhancement modes?
MOSFET transistors have two modes; depletion and enhancement.
Depletion MOSFETs work like a closed switch. The current passes through when no current is applied. The current flow will stop if a negative voltage is applied.
Enhancement mode MOSFETs are similar to a variable resistor and are generally more popular than the depletion mode MOSFETs. They come in n-channel or p-channel variants.

How do MOSFETs work?
The pins on a MOSFET package are the Source, Gate and Drain. When a voltage is applied between the Gate and the Source terminals, current can pass through from the Drain to the Source pins. When the voltage applied to the Gate changes, the resistance from the Drain to the Source will change too. The lower the voltage applied, the higher the resistance. As the voltage increases, the resistance from the Drain to Source will decrease.
Power MOSFETs are similar to standard MOSFETs but they are designed to handle a higher level of power.

N-Channel vs. P-Channel MOSFETs
MOSFETs are made of p-type or n-type doped silicon.
N-Channel MOSFETS contain additional electrons which are free to move around. They are the more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.
P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the Gate terminal is lower than the Source voltage.

Where are MOSFETs used?
MOSFETs are found within many applications, such as microprocessors and other memory components. MOSFET transistors are most commonly used as a voltage-controlled switch within circuits.

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Description Price Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Gate Source Voltage Package Type Mounting Type Pin Count Transistor Configuration Channel Mode Category Maximum Power Dissipation
RS Stock No. 145-4548
Mfr. Part No.FDPF8N50NZF
MYR4.385
Each (In a Tube of 50)
units
N 7 A 500 V 1 Ω - 3V -25 V, +25 V TO-220F Through Hole 3 Single Enhancement Power MOSFET 40 W
RS Stock No. 739-4894
Mfr. Part No.FDPF8N50NZF
MYR6.43
Each
units
N 7 A 500 V 1 Ω - 3V -25 V, +25 V TO-220F Through Hole 3 Single Enhancement Power MOSFET 40 W
RS Stock No. 542-9434
Mfr. Part No.IRF830APBF
BrandVishay
MYR8.15
Each
units
N 5 A 500 V 1.4 Ω - 2V -30 V, +30 V TO-220AB Through Hole 3 Single Enhancement Power MOSFET 74 W
New
RS Stock No. 178-0834
Mfr. Part No.IRF830APBF
BrandVishay
MYR4.606
Each (In a Tube of 50)
units
- - - - - - - - - - - - - -
RS Stock No. 166-3621
Mfr. Part No.FQPF5N50CYDTU
MYR3.679
Each (In a Tube of 50)
units
N 5 A 500 V 1.4 Ω 4V 2V -30 V, +30 V TO-220F Through Hole 3 Single Enhancement Power MOSFET 38 W
RS Stock No. 862-8779
Mfr. Part No.FQPF5N50CYDTU
MYR3.894
Each (In a Pack of 10)
units
N 5 A 500 V 1.4 Ω 4V 2V -30 V, +30 V TO-220F Through Hole 3 Single Enhancement Power MOSFET 38 W
RS Stock No. 891-2869
Mfr. Part No.TK10A60W,S5VX(J
BrandToshiba
MYR4.61
Each (In a Pack of 5)
units
N 9.7 A 600 V 380 mΩ 3.7V - -30 V, +30 V TO-220SIS Through Hole 3 Single Enhancement Power MOSFET 30 W
RS Stock No. 772-5343
Mfr. Part No.2SK2221-E
MYR31.24
Each
units
N 8 A 200 V - 1.45V - -20 V, +20 V SC-65 Through Hole 3 Single Enhancement Power MOSFET 100 W
RS Stock No. 919-4898
Mfr. Part No.IRLZ34NPBF
BrandInfineon
MYR2.94
Each (In a Tube of 50)
units
N 30 A 55 V 35 mΩ 2V 1V -16 V, +16 V TO-220AB Through Hole 3 Single Enhancement Power MOSFET 68 W
RS Stock No. 541-1247
Mfr. Part No.IRLZ34NPBF
BrandInfineon
MYR7.39
Each
units
N 30 A 55 V 35 mΩ 2V 1V -16 V, +16 V TO-220AB Through Hole 3 Single Enhancement Power MOSFET 68 W
RS Stock No. 761-4542
Mfr. Part No.MTP3055VL
MYR4.308
Each (In a Pack of 5)
units
N 12 A 60 V 180 mΩ - 1V -15 V, +15 V TO-220 Through Hole 3 Single Enhancement Power MOSFET 48 W
RS Stock No. 783-3024
Mfr. Part No.STW88N65M5
MYR77.45
Each
units
N 84 A 710 V 29 mΩ 5V 3V -25 V, +25 V TO-247 Through Hole 3 Single Enhancement Power MOSFET 450 W
RS Stock No. 145-5555
Mfr. Part No.MTP3055VL
MYR2.277
Each (In a Tube of 50)
units
N 12 A 60 V 180 mΩ - 1V -15 V, +15 V TO-220 Through Hole 3 Single Enhancement Power MOSFET 48 W
RS Stock No. 103-2004
Mfr. Part No.STW88N65M5
MYR80.789
Each (In a Tube of 30)
units
N 84 A 710 V 29 mΩ 5V 3V -25 V, +25 V TO-247 Through Hole 3 Single Enhancement Power MOSFET 450 W
RS Stock No. 911-4830
Mfr. Part No.SPW20N60C3FKSA1
BrandInfineon
MYR14.253
Each (In a Tube of 30)
units
N 20.7 A 650 V 190 mΩ 3.9V 2.1V -20 V, +20 V TO-247 Through Hole 3 Single Enhancement Power MOSFET 208 W
RS Stock No. 462-3449
Mfr. Part No.SPW20N60C3FKSA1
BrandInfineon
MYR24.42
Each
units
N 21 A 650 V 190 mΩ 3.9V 2.1V -20 V, +20 V TO-247 Through Hole 3 Single Enhancement Power MOSFET 208 W
RS Stock No. 799-5056
Mfr. Part No.TK17A65W,S5X(M
BrandToshiba
MYR6.59
Each (In a Pack of 5)
units
N 17 A 650 V 200 mΩ 3.5V - -30 V, +30 V TO-220SIS Through Hole 3 Single Enhancement - 45 W
RS Stock No. 919-4842
Mfr. Part No.IRF530NPBF
BrandInfineon
MYR3.332
Each (In a Tube of 50)
units
N 17 A 100 V 90 mΩ 4V 2V -20 V, +20 V TO-220AB Through Hole 3 Single Enhancement Power MOSFET 70 W
New
RS Stock No. 178-0835
Mfr. Part No.IRF840APBF
BrandVishay
MYR6.036
Each (In a Tube of 50)
units
- - - - - - - - - - - - - -
RS Stock No. 168-7961
Mfr. Part No.TK17A65W,S5X(M
BrandToshiba
MYR12.594
Each (In a Tube of 50)
units
N 17 A 650 V 200 mΩ 3.5V - -30 V, +30 V TO-220SIS Through Hole 3 Single Enhancement Power MOSFET 45 W
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