MOSFETs

MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. It acts very similarly to a switch and is used for switching or amplifying electronic signals.

These semiconductor devices are ICs (integrated circuits) which are mounted onto PCBs. MOSFETs come in a range of standard package types such as DPAK, D2PAK, DFN, I2PAK, SOIC, SOT-223 and TO-220. For more information about MOSFETs, please see our complete guide to MOSFETs.

What are depletion and enhancement modes?

MOSFET transistors have two modes; depletion and enhancement. Depletion MOSFETs work like a closed switch. The current passes through when no current is applied. The current flow will stop if a negative voltage is applied. Enhancement mode MOSFETs are like a variable resistor and are generally more popular than the depletion mode MOSFETs. They come in n-channel or p-channel variants.

How do MOSFETs work?

The pins on a MOSFET package are the Source, Gate and Drain. When a voltage is applied between the Gate and the Source terminals, current can pass through from the Drain to the Source pins. When the voltage applied to the Gate changes, the resistance from the Drain to the Source will change too. The lower the voltage applied, the higher the resistance. As the voltage increases, the resistance from the Drain to Source will decrease. Power MOSFETs are like standard MOSFETs but they are designed to handle a higher level of power.

N-Channel vs. P-Channel MOSFETs

N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.

P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the Gate terminal is lower than the Source voltage.


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Description Price Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Package Type Mounting Type Pin Count Maximum Gate Source Voltage Channel Mode Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Power Dissipation Transistor Configuration Number of Elements per Chip
RS Stock No. 739-4894
Mfr. Part No.FDPF8N50NZF
MYR6.72
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N 7 A 500 V 1 Ω TO-220F Through Hole 3 -25 V, +25 V Enhancement - 3V 40 W Single 1
RS Stock No. 145-4548
Mfr. Part No.FDPF8N50NZF
MYR5.458
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N 7 A 500 V 1 Ω TO-220F Through Hole 3 -25 V, +25 V Enhancement - 3V 40 W Single 1
RS Stock No. 178-0834
Mfr. Part No.IRF830APBF
BrandVishay
MYR4.778
Each (In a Tube of 50)
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- - - - - - - - - - - - - -
RS Stock No. 542-9434
Mfr. Part No.IRF830APBF
BrandVishay
MYR8.66
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N 5 A 500 V 1.4 Ω TO-220AB Through Hole 3 -30 V, +30 V Enhancement - 2V 74 W Single 1
RS Stock No. 166-3621
Mfr. Part No.FQPF5N50CYDTU
MYR5.04
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N 5 A 500 V 1.4 Ω TO-220F Through Hole 3 -30 V, +30 V Enhancement 4V 2V 38 W Single 1
RS Stock No. 862-8779
Mfr. Part No.FQPF5N50CYDTU
MYR5.04
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N 5 A 500 V 1.4 Ω TO-220F Through Hole 3 -30 V, +30 V Enhancement 4V 2V 38 W Single 1
RS Stock No. 891-2869
Mfr. Part No.TK10A60W,S5VX(J
BrandToshiba
MYR7.87
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N 9.7 A 600 V 380 mΩ TO-220SIS Through Hole 3 -30 V, +30 V Enhancement 3.7V - 30 W Single 1
RS Stock No. 919-4898
Mfr. Part No.IRLZ34NPBF
BrandInfineon
MYR4.421
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N 30 A 55 V 35 mΩ TO-220AB Through Hole 3 -16 V, +16 V Enhancement 2V 1V 68 W Single 1
RS Stock No. 541-1247
Mfr. Part No.IRLZ34NPBF
BrandInfineon
MYR5.68
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N 30 A 55 V 35 mΩ TO-220AB Through Hole 3 -16 V, +16 V Enhancement 2V 1V 68 W Single 1
RS Stock No. 145-5555
Mfr. Part No.MTP3055VL
MYR5.607
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N 12 A 60 V 180 mΩ TO-220 Through Hole 3 -15 V, +15 V Enhancement - 1V 48 W Single 1
RS Stock No. 761-4542
Mfr. Part No.MTP3055VL
MYR6.784
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N 12 A 60 V 180 mΩ TO-220 Through Hole 3 -15 V, +15 V Enhancement - 1V 48 W Single 1
RS Stock No. 783-3024
Mfr. Part No.STW88N65M5
MYR57.10
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N 84 A 710 V 29 mΩ TO-247 Through Hole 3 -25 V, +25 V Enhancement 5V 3V 450 W Single 1
RS Stock No. 103-2004
Mfr. Part No.STW88N65M5
MYR50.756
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N 84 A 710 V 29 mΩ TO-247 Through Hole 3 -25 V, +25 V Enhancement 5V 3V 450 W Single 1
RS Stock No. 911-4830
Mfr. Part No.SPW20N60C3FKSA1
BrandInfineon
MYR20.444
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N 20.7 A 650 V 190 mΩ TO-247 Through Hole 3 -20 V, +20 V Enhancement 3.9V 2.1V 208 W Single 1
RS Stock No. 462-3449
Mfr. Part No.SPW20N60C3FKSA1
BrandInfineon
MYR26.88
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N 21 A 650 V 190 mΩ TO-247 Through Hole 3 -20 V, +20 V Enhancement 3.9V 2.1V 208 W Single 1
RS Stock No. 178-0790
Mfr. Part No.IRFP264PBF
BrandVishay
MYR16.244
Each (In a Tube of 25)
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N 38 A 250 V 75 mΩ TO-247AC Through Hole 3 -20 V, +20 V Enhancement - 2V 280 W Single 1
RS Stock No. 178-0835
Mfr. Part No.IRF840APBF
BrandVishay
MYR6.521
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RS Stock No. 799-5056
Mfr. Part No.TK17A65W,S5X(M
BrandToshiba
MYR10.114
Each (In a Pack of 5)
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N 17 A 650 V 200 mΩ TO-220SIS Through Hole 3 -30 V, +30 V Enhancement 3.5V - 45 W Single 1
RS Stock No. 541-0755
Mfr. Part No.IRF530NPBF
BrandInfineon
MYR13.97
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N 17 A 100 V 90 mΩ TO-220AB Through Hole 3 -20 V, +20 V Enhancement 4V 2V 70 W Single 1
RS Stock No. 168-7961
Mfr. Part No.TK17A65W,S5X(M
BrandToshiba
MYR9.636
Each (In a Tube of 50)
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N 17 A 650 V 200 mΩ TO-220SIS Through Hole 3 -30 V, +30 V Enhancement 3.5V - 45 W Single 1