MYR2.745 Each (Supplied on a Reel) | Infineon | N | 1.2 A | 100 V | 800 mΩ | SOT-223 | OptiMOS™ | Surface Mount | 3 | -20 V, +20 V | Enhancement | 1.8V | 0.8V | 1.8 W | - | Single | 6.5mm | +150 °C | 1 | Si | 4.5 nC @ 10 V | 3.5mm |
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MYR3.03 Each (In a Pack of 25) | Infineon | N | 57 A | 30 V | 7.2 mΩ | TDSON | OptiMOS™ | Surface Mount | 8 | -20 V, +20 V | Enhancement | 2V | 1.2V | 28 W | - | Single | 6.1mm | +150 °C | 1 | Si | 12 nC @ 10 V | 5.35mm |
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MYR13.38 Each (Supplied in a Tube) | Infineon | N | 130 A | 40 V | 7 mΩ | TO-220AB | LogicFET | Through Hole | 3 | -16 V, +16 V | Enhancement | 1V | 1V | 200 W | - | Single | 10.54mm | +175 °C | 1 | Si | 100 nC @ 4.5 V | 4.69mm |
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| Infineon | P | 31 A | 55 V | 60 mΩ | TO-220AB | HEXFET | Through Hole | 3 | -20 V, +20 V | Enhancement | 4V | 2V | 110 W | - | Single | 10.54mm | +175 °C | 1 | Si | 63 nC @ 10 V | 4.69mm |
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| Infineon | N | 20 A | 600 V | 190 mΩ | TO-247 | CoolMOS S5 | Through Hole | 3 | -20 V, +20 V | Enhancement | 5.5V | 3.5V | 208 W | - | Single | 15.9mm | +150 °C | 1 | Si | 79 nC @ 10 V | 5.3mm |
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MYR3.46 Each (Supplied on a Reel) | Infineon | N | 14.6 A | 30 V | 9 mΩ | SO | IRF7809AV | Surface Mount | 8 | ±12 V | Enhancement | - | 1V | 2.5 W | - | Single | 5mm | +150 °C | 1 | - | 41 nC @ 5 V | 4mm |
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MYR5.824 Each (In a Pack of 5) | Infineon | N | 33 A | 150 V | - | D-PAK | HEXFET | PCB Mount | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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| Infineon | N, P | 2 A, 2.7 A | 30 V | 110 mΩ, 200 mΩ | MSOP | HEXFET | Surface Mount | 8 | -20 V, +20 V | Enhancement | 1V | 1V | 1.25 W | - | Isolated | 3mm | +150 °C | 2 | Si | 7.5 nC @ 10 V, 7.8 nC @ 10 V | 3mm |
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MYR31.265 Each (In a Pack of 2) | Infineon | N | 35 A | 600 V | 0.06 Ω | TO-247 | CoolMOS™ C7 | Through Hole | 3 | - | Enhancement | 4V | - | - | - | - | - | - | 1 | Si | - | - |
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MYR5.957 Each (Supplied on a Reel) | Infineon | N | 42 A | 40 V | 0.0055 O | DPAK (TO-252) | HEXFET | Surface Mount | 3 | - | Enhancement | 4V | - | - | - | - | - | - | 1 | Si | - | - |
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| Infineon | P | 19 A | 55 V | 100 mΩ | TO-220AB | HEXFET | Through Hole | 3 | -20 V, +20 V | Enhancement | 4V | 2V | 68 W | - | Single | 10.54mm | +175 °C | 1 | Si | 35 nC @ 10 V | 4.69mm |
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MYR38.30 Each (Supplied in a Tube) | Infineon | - | - | 100 V | - | PG-TO247 | HEXFET | Surface Mount | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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MYR13.072 Each (In a Pack of 5) | Infineon | P | 38 A | 100 V | 60 mΩ | I2PAK (TO-262) | HEXFET | Through Hole | 3 | -20 V, +20 V | Enhancement | 4V | 2V | 3.1 W | - | Single | 10.54mm | +150 °C | 1 | Si | 150 nC @ 10 V | 4.69mm |
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| Infineon | - | - | 100 V | - | PG-TO247 | HEXFET | Surface Mount | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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MYR3.201 Each (On a Reel of 2000) | Infineon | N | 180 A | 40 V | 2.4 mΩ | DPAK (TO-252) | HEXFET | Surface Mount | 3 | -20 V, +20 V | Enhancement | 3.9V | 2.2V | 140 W | - | - | 6.73mm | +175 °C | 1 | - | 89 nC @ 20 V | 2.39mm |
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MYR35.08 Each (Supplied in a Tube) | Infineon | - | 316 A | 100 V | - | PG-TO 247 | HEXFET | Surface Mount | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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MYR4.002 Each (In a Pack of 20) | Infineon | P | 18 A | 55 V | 110 mΩ | DPAK (TO-252) | HEXFET | Surface Mount | 3 | -20 V, +20 V | Enhancement | 4V | 2V | 57 W | - | Single | 6.73mm | +150 °C | 1 | Si | 32 nC @ 10 V | 6.22mm |
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| Infineon | N | 18 A | 200 V | 150 mΩ | TO-220AB | HEXFET | Through Hole | 3 | -20 V, +20 V | Enhancement | 4V | 2V | 150 W | - | Single | 10.67mm | +175 °C | 1 | Si | 67 nC @ 10 V | 4.83mm |
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| Infineon | N | 180 A | 100 V | 5 mΩ | TO-220AB | HEXFET | Through Hole | 3 | -20 V, +20 V | Enhancement | 4V | 2V | 370 W | - | Single | 10.66mm | +175 °C | 1 | Si | 150 nC @ 10 V | 4.82mm |
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| Infineon | P | 23 A | 100 V | 117 mΩ | TO-247AC | HEXFET | Through Hole | 3 | -20 V, +20 V | Enhancement | 4V | 2V | 140 W | - | Single | 15.9mm | +175 °C | 1 | Si | 97 nC @ 10 V | 5.3mm |
