Infineon HEXFET P-Channel MOSFET, 31 A, 55 V, 3-Pin TO-220AB IRF5305PBF

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

This MOSFET is tailored for high-efficiency power applications, providing both flexibility and reliability. Its enhancement mode operation makes it suitable for various systems requiring controlled switching, particularly in industrial and automation environments.

• Continuous drain current capacity of 31A supports demanding applications
• Voltage rating of 55V facilitates dependable switching
• Low on-resistance of 60mΩ reduces power loss
• TO-220AB package design enhances thermal performance
• Gate-source voltage range of ±20V accommodates diverse applications
• Rapid switching optimisation boosts overall system efficiency

• Used in motor control systems for efficient operation
• Applicable in power supply circuits for stable performance
• Integrated into electronic devices requiring effective switching capabilities
• Suitable for deployment in renewable energy systems

It operates within -55°C to +175°C, making it apt for extreme conditions.

The TO-220AB package provides low thermal resistance, improving cooling efficiency during operation.

Yes, it supports pulsed drain currents up to 110A, ensuring adequate performance for transient demands.

It is a P-channel Si MOSFET, optimised for high-efficiency applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.