Infineon HEXFET P-Channel MOSFET, 19 A, 55 V, 3-Pin TO-220AB IRF9Z34NPBF

RS Stock No.:: 919-4867
Mfr. Part No.:: IRF9Z34NPBF
Manufacturer:: Infineon

Infineon HEXFET P-Channel MOSFET, 19 A, 55 V, 3-Pin TO-220AB IRF9Z34NPBF

Bulk discount available

Subtotal (1 tube of 50 units)**

MYR114.50

Temporarily out of stock - back order for despatch 07/07/2025, delivery within 4 working days from despatch date*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over MYR500.00

Units	Per Unit	Per Tube**
50 - 50	MYR2.29	MYR114.50
100 - 150	MYR2.254	MYR112.70
200 +	MYR2.211	MYR110.55

**price indicative

RS Stock No.:: 919-4867
Mfr. Part No.:: IRF9Z34NPBF
Manufacturer:: Infineon

P-Channel Power MOSFET 40V to 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 19A Maximum Continuous Drain Current, 68W Maximum Power Dissipation - IRF9Z34NPBF

This P-channel MOSFET is designed for consistent performance across various electronic applications. With a continuous drain current rating of 19A and a drain-source voltage of 55V, it is suitable for automation and power management in modern electronic systems. Its robust thermal characteristics enable operation in challenging environments.

Features & Benefits

• High current capacity meets significant load requirements
• Maximum power dissipation of 68W improves durability
• Enhancement mode design supports efficient switching performance
• Low gate charge allows for quicker operation
• Effective thermal characteristics ensure stable performance at elevated temperatures
• TO-220AB package offers convenient integration into circuits

Applications

• Suitable for power supply circuits prioritising efficiency
• Perfect for motor control in automation systems
• Appropriate for high-frequency switching scenarios
• Employed in power management systems to enhance performance

What is the maximum temperature for this MOSFET?

It can operate at a maximum temperature of +175 °C while maintaining efficiency and reliability.

How does it handle gate-source voltage variations?

It accommodates a maximum gate-source voltage of ±20V, providing flexibility in circuit design.

What is the significance of its low drain-source resistance?

A maximum drain-source resistance of 100 mΩ increases power efficiency and reduces heat production.

Can it be used in high-frequency applications?

Yes, it supports fast switching due to its low gate charge of 35 nC at 10V.

How is the thermal performance managed in practical applications?

The high power dissipation capacity of 68W aids in effective heat management during operation.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	19 A
Maximum Drain Source Voltage	55 V
Series	HEXFET
Package Type	TO-220AB
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	100 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	68 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Length	10.54mm
Typical Gate Charge @ Vgs	35 nC @ 10 V
Maximum Operating Temperature	+175 °C
Width	4.69mm
Transistor Material	Si
Forward Diode Voltage	1.6V
Minimum Operating Temperature	-55 °C
Height	8.77mm