Infineon HEXFET P-Channel MOSFET, 31 A, 55 V, 3-Pin DPAK IRFR5305TRPBF

RS Stock No.:: 913-4789
Mfr. Part No.:: IRFR5305TRPBF
Manufacturer:: Infineon

Infineon HEXFET P-Channel MOSFET, 31 A, 55 V, 3-Pin DPAK IRFR5305TRPBF

Subtotal (1 reel of 2000 units)**

MYR3,800.00

4000 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over MYR500.00

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Units	Per Unit	Per Reel**
2000 +	MYR1.90	MYR3,800.00

**price indicative

RS Stock No.:: 913-4789
Mfr. Part No.:: IRFR5305TRPBF
Manufacturer:: Infineon

P-Channel Power MOSFET 40V to 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 31A Maximum Continuous Drain Current, 110W Maximum Power Dissipation - IRFR5305TRPBF

This MOSFET offers advanced performance for various electronic applications. Its low on-resistance and high current handling capabilities contribute to effective power management. With a robust design and reliable electrical characteristics, this component is suitable for various environments in automation and electronic systems.

Features & Benefits

• Achieves low on-resistance for enhanced efficiency
• Supports a maximum continuous drain current of 31A
• Designed for ease of use in surface mount applications
• Capable of operating within a temperature range of -55°C to +175°C
• Facilitates quick switching speeds for improved performance
• Allows a maximum power dissipation of 110W for diverse applications

Applications

• Utilised in power management systems
• Suitable for motor control
• Employed in switching power supplies for electronic devices
• Used in automotive circuits for improved efficiency

What are the recommended soldering techniques for installation?

Use vapour phase, infrared, or wave soldering techniques for optimal results, ensuring minimal thermal stress on the component.

Can it handle high temperature environments?

Yes, it operates effectively within a temperature range of -55°C to +175°C, making it appropriate for extreme conditions.

What is the significance of low RDS(on)?

Low RDS(on) reduces power losses, enhancing overall efficiency and decreasing heat generation during operation.

How do I ensure accurate switching behaviour?

Implement suitable gate drive circuits to achieve precise turn-on and turn-off characteristics, following the suggested trigger voltages.

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	31 A
Maximum Drain Source Voltage	55 V
Series	HEXFET
Package Type	DPAK (TO-252)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	65 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	110 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+175 °C
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	63 nC @ 10 V
Length	6.73mm
Transistor Material	Si
Width	6.22mm
Minimum Operating Temperature	-55 °C
Height	2.39mm