Infineon HEXFET P-Channel MOSFET, 31 A, 55 V, 3-Pin IPAK IRFU5305PBF

RS Stock No.:: 542-9951
Distrelec Article No.:: 303-41-378
Mfr. Part No.:: IRFU5305PBF
Manufacturer:: Infineon

Infineon HEXFET P-Channel MOSFET, 31 A, 55 V, 3-Pin IPAK IRFU5305PBF

Bulk discount available

Subtotal (1 unit)**

MYR4.73

Temporarily out of stock - back order for despatch 10/07/2025, delivery within 4 working days from despatch date*

* Delivery dates may change based on your chosen quantity and delivery address.

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Units	Per Unit
1 - 18	MYR4.73
19 - 37	MYR4.64
38 +	MYR4.51

**price indicative

RS Stock No.:: 542-9951
Distrelec Article No.:: 303-41-378
Mfr. Part No.:: IRFU5305PBF
Manufacturer:: Infineon

P-Channel Power MOSFET 40V to 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 31A Maximum Continuous Drain Current, 110W Maximum Power Dissipation - IRFU5305PBF

This MOSFET is engineered for efficiency and reliability across diverse electronic applications. The advanced processing techniques incorporated enable low resistance per silicon area, making it suitable for high-performance circuit designs. Its robust capabilities accommodate a wide array of drain current and voltage specifications, ensuring optimal use in automation and electrical systems.

Features & Benefits

• High current handling capability of up to 31A
• Operates effectively in enhancement mode for improved performance
• Low static drain-to-source on-resistance for efficient energy consumption
• Broad gate-to-source voltage range of ±20V for versatile control
• Can withstand power dissipation levels up to 110W
• Compact TO-251 IPAK package facilitates space-efficient installation

Applications

• Ideal for power management in consumer electronics
• Employed in renewable energy systems for efficient control
• Suitable for power in electric vehicles
• Utilised in high-frequency switching power supplies for enhanced performance

What operating temperature range can be maintained?

The component can operate within -55°C to +175°C, suitable for various environments.

How does installation affect performance?

Proper installation in space-constrained applications optimises heat dissipation, thus enhancing reliability and performance.

What should be considered for heat management during use?

Ensuring adequate cooling methods is crucial due to its maximum power dissipation of 110 W when operating at high drain currents.

What type of circuit designs benefit from its specifications?

The low on-resistance and high current rating make it well-suited for designs focused on efficiency and minimising energy losses in applications such as motor control and power supplies.

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	31 A
Maximum Drain Source Voltage	55 V
Package Type	IPAK (TO-251)
Series	HEXFET
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	65 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	110 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	63 nC @ 10 V
Width	2.3mm
Transistor Material	Si
Number of Elements per Chip	1
Length	6.6mm
Maximum Operating Temperature	+175 °C
Height	6.1mm
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.3V