Infineon HEXFET P-Channel MOSFET, 11 A, 55 V, 3-Pin IPAK IRFU9024NPBF

RS Stock No.:: 919-4911
Mfr. Part No.:: IRFU9024NPBF
Manufacturer:: Infineon

Infineon HEXFET P-Channel MOSFET, 11 A, 55 V, 3-Pin IPAK IRFU9024NPBF

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Subtotal (1 tube of 75 units)**

MYR193.13

300 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*

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Units	Per Unit	Per Tube**
75 - 75	MYR2.575	MYR193.125
150 - 225	MYR2.535	MYR190.125
300 +	MYR2.485	MYR186.375

**price indicative

RS Stock No.:: 919-4911
Mfr. Part No.:: IRFU9024NPBF
Manufacturer:: Infineon

P-Channel Power MOSFET 40V to 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 11A Maximum Continuous Drain Current, 38W Maximum Power Dissipation - IRFU9024NPBF

This P-channel MOSFET is intended for high-efficiency power management applications. It has a maximum continuous drain current of 11A and a maximum drain-source voltage of 55V, adept at handling significant loads while ensuring reliability in various operational conditions. Its through-hole mounting type allows for seamless integration into existing designs, making it a key component for professionals in automation and electronics.

Features & Benefits

• Low Rds(on) of 175mΩ enhances energy efficiency
• Maximum power dissipation of 38W supports robust performance
• Single transistor configuration simplifies design processes
• Complies with lead-free standards for environmentally conscious applications

Applications

• Suitable for power supplies and conversion circuits
• Utilised in motor control systems for effective operation
• Integrated into battery management systems for improved performance
• Applicable in automotive environments for dependable power handling
• Ideal for industrial automation equipment requiring robust performance

What is the temperature range for stable operation?

The component operates effectively within a temperature range of -55°C to +150°C, ensuring reliable performance in various environments.

How can it handle high power loads efficiently?

With a maximum power dissipation of 38W and low Rds(on) of 175mΩ, it manages high power loads with minimal energy loss.

Is it compatible with a standard PCB layout?

Yes, the through-hole mounting type is compatible with standard PCB layouts, facilitating straightforward integration.

What criteria should be considered for gate voltage?

A gate-source voltage range of -20V to +20V provides flexibility

optimum performance is achieved at 10V for effective operation.

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	11 A
Maximum Drain Source Voltage	55 V
Series	HEXFET
Package Type	IPAK (TO-251)
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	175 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	38 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	2.39mm
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	19 nC @ 10 V
Length	6.73mm
Number of Elements per Chip	1
Transistor Material	Si
Height	6.22mm
Minimum Operating Temperature	-55 °C