JFETs

JFETs
A JFET is a four terminal device, the terminals are called gate, drain, source and body. The body terminal is always connected to the source. There are two types of JFETs an N-Channel & P-Channel.
What does JFET stand for?
JFET stands for junction field-effect transistor
N-Channel JFET Construction
The name N-Channel signifies that the electrons are the majority charge carriers. To form the N-Channel an N type semiconductor is used as a base and doped with a P type semiconductor at both ends. Both these P regions are electrically linked together with an ohmic contact at the gate. Two further terminals are taken out at the opposite ends for the drain and the source.
P-Channel JFET Construction
The name P channel signifies that the holes are the majority charge carriers. To form the P-Channel a P type semiconductor is used as a base and doped with an N type semiconductor at both ends. Both these N regions are electrically linked together with an ohmic contact at the gate. Two further terminals are taken out at the opposite ends for the drain and the source.
Features and Benefits
• High input impedance
• Voltage controlled device
• High degree of isolation between the input and the output
• Less noise
What are they also known as?
JUGFET
What are JFET transistors used for?
JFET transistors have many applications in electronics and communication. You can use them as an electronically controlled switch to control electric power to a load, and as amplifiers.
What is the difference between a JFET & BJT (Bipolar Junction Transistor)?
The main difference between a JFET and BJT is a field effect transistor only majority charge carrier flows while the BJT (bipolar transistor) offers both majority and minority charge carrier flows.
What is doping of semiconductors?
Doping is the process of including foreign impurities to intrinsic semiconductors to change their electrical properties. Trivalent atoms used to dope silicon cause an intrinsic semiconductor to become a P-Type semiconductor. Pentavalent used to dope silicon cause an intrinsic semiconductor to become an N-Type semiconductor.

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Description Price Channel Type Idss Drain-Source Cut-off Current Maximum Drain Source Voltage Maximum Gate Source Voltage Maximum Drain Gate Voltage Configuration Transistor Configuration Maximum Drain Source Resistance Mounting Type Package Type Pin Count Drain Gate On-Capacitance Source Gate On-Capacitance Dimensions
RS Stock No. 760-3123
Mfr. Part No.2SK208-R(TE85L,F)
BrandToshiba
MYR1.329
Each (In a Pack of 10)
units
N 0.3 → 0.75mA 10 V -30 V -50V Single Single - Surface Mount SOT-346 (SC-59) 3 - - 2.9 x 1.5 x 1.1mm
RS Stock No. 166-2919
Mfr. Part No.J107
MYR1.358
Each (In a Bag of 10000)
units
N 100mA - -25 V 25V Single Single 8 Ω Through Hole TO-92 3 160pF 160pF 5.2 x 4.19 x 5.33mm
RS Stock No. 806-1741
Mfr. Part No.J107
MYR2.034
Each (In a Pack of 20)
units
N 100mA - -25 V 25V Single Single 8 Ω Through Hole TO-92 3 160pF 160pF 5.2 x 4.19 x 5.33mm
RS Stock No. 806-1757
Mfr. Part No.J112
MYR1.382
Each (In a Pack of 50)
units
N Min. 5mA - -35 V 35V Single Single 50 Ω Through Hole TO-92 3 28pF 28pF 5.2 x 4.19 x 5.33mm
RS Stock No. 124-1385
Mfr. Part No.J112
MYR0.39
Each (In a Bag of 1000)
units
N Min. 5mA - -35 V 35V Single Single 50 Ω Through Hole TO-92 3 28pF 28pF 5.2 x 4.19 x 5.33mm
RS Stock No. 806-1766
Mfr. Part No.J113
MYR1.171
Each (In a Pack of 50)
units
N Min. 2mA - -35 V 35V Single Single 100 Ω Through Hole TO-92 3 28pF 28pF 5.2 x 4.19 x 5.33mm
RS Stock No. 760-3126
Mfr. Part No.2SK209-Y(TE85L,F)
BrandToshiba
MYR1.499
Each (In a Pack of 10)
units
N 1.2 → 3.0mA 10 V -30 V -50V Single Single - Surface Mount SOT-346 (SC-59) 3 - - 2.9 x 1.5 x 1.1mm
RS Stock No. 756-0350
Mfr. Part No.2SK3320-BL(TE85L,F
BrandToshiba
MYR2.146
Each (In a Pack of 5)
units
N 6 → 14mA 50 V -1.5 V -50V Dual Common Source - Surface Mount USV 5 13pF - 2 x 1.25 x 0.9mm
RS Stock No. 166-1840
Mfr. Part No.MMBFJ201
MYR0.472
Each (On a Reel of 3000)
units
N 0.3 → 1.5 - -40 V 40V Single Single - Surface Mount SOT-23 3 - - 2.92 x 1.3 x 0.93mm
RS Stock No. 145-5347
Mfr. Part No.J113
MYR0.302
Each (In a Bag of 1000)
units
N Min. 2mA - -35 V 35V Single Single 100 Ω Through Hole TO-92 3 28pF 28pF 5.2 x 4.19 x 5.33mm
RS Stock No. 761-3688
Mfr. Part No.MMBFJ201
MYR1.426
Each (In a Pack of 25)
units
N 0.3 → 1.5mA - -40 V 40V Single Single - Surface Mount SOT-23 3 - - 2.92 x 1.3 x 0.93mm
RS Stock No. 806-1747
Mfr. Part No.J105
MYR1.945
Each (In a Pack of 10)
units
N 500mA - -25 V 25V Single Single 3 Ω Through Hole TO-92 3 160pF 160pF 5.2 x 4.19 x 5.33mm
RS Stock No. 162-9314
Mfr. Part No.CPH6904-TL-E
MYR1.47
Each (On a Reel of 3000)
units
N 20 → 40mA 25 V - -25V Dual Common Source - Surface Mount CPH 6 6pF 2.3pF 2.9 x 1.6 x 0.9mm
RS Stock No. 166-3094
Mfr. Part No.MMBFJ176
MYR0.589
Each (On a Reel of 3000)
units
P -2 → -25mA 15 V +30 V -30V Single Single 250 Ω Surface Mount SOT-23 3 - - 2.92 x 1.3 x 0.93mm
RS Stock No. 772-5920
Mfr. Part No.NE3514S02-A
MYR4.885
Each (In a Pack of 10)
units
N 15 → 70mA 4 V -3 V - Single Single - Surface Mount SO2 4 - - 2.6 x 2.6 x 1.5mm
RS Stock No. 166-1831
Mfr. Part No.MMBFJ113
MYR0.446
Each (On a Reel of 3000)
units
N Min. 2mA - -35 V 35V Single Single 100 Ω Surface Mount SOT-23 3 28pF 28pF 2.92 x 1.3 x 0.93mm
RS Stock No. 806-4314
Mfr. Part No.MMBFJ176
MYR0.826
Each (On a Tape of 50)
units
P -2 → -25mA 15 V +30 V -30V Single Single 250 Ω Surface Mount SOT-23 3 - - 2.92 x 1.3 x 0.93mm
RS Stock No. 792-5170
Mfr. Part No.2SK932-22-TB-E
MYR1.233
Each (In a Pack of 25)
units
N 7.3 → 12mA 15 V - -15V Single Single - Surface Mount CP 3 10pF 3pF 2.9 x 1.5 x 1.1mm
RS Stock No. 166-2717
Mfr. Part No.MMBF4117
MYR0.44
Each (On a Reel of 3000)
units
N 0.03 → 0.09mA - -40 V 40V Single Single - Surface Mount SOT-23 3 - - 2.92 x 1.3 x 0.93mm
RS Stock No. 761-3672
Mfr. Part No.MMBF4117
MYR1.268
Each (In a Pack of 50)
units
N 0.03 → 0.09mA - -40 V 40V Single Single - Surface Mount SOT-23 3 - - 2.92 x 1.3 x 0.93mm