Dual N/P-Channel-Channel MOSFET, 2.1 A, 3.4 A, 30 V, 6-Pin TSOT-26 Diodes Inc DMG6602SVT-7

RS Stock No.:: 121-9598
Mfr. Part No.:: DMG6602SVT-7
Manufacturer:: DiodesZetex

Dual N/P-Channel-Channel MOSFET, 2.1 A, 3.4 A, 30 V, 6-Pin TSOT-26 Diodes Inc DMG6602SVT-7

This image is representative of the product range

76700 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ

Price Each (On a Reel of 3000)

MYR1.89

Units	Per Unit	Per Reel*
3000 +	MYR1.89	MYR5,670.00

*price indicative

RS Stock No.:: 121-9598
Mfr. Part No.:: DMG6602SVT-7
Manufacturer:: DiodesZetex

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	2.1 A, 3.4 A
Maximum Drain Source Voltage	30 V
Package Type	TSOT-26
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	100 mΩ, 140 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3V
Maximum Power Dissipation	1.27 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	2
Width	1.6mm
Typical Gate Charge @ Vgs	7 nC @ 10 V, 9 nC @ 10 V
Transistor Material	Si
Length	2.9mm
Height	0.9mm
Minimum Operating Temperature	-55 °C

Dual N/P-Channel-Channel MOSFET, 2.1 A, 3.4 A, 30 V, 6-Pin TSOT-26 Diodes Inc DMG6602SVT-7

Dual N/P-Channel MOSFET, Diodes Inc.