MOSFETs

MOSFETs, also known as MOSFET transistors, stands for Metal Oxide Semiconductor Field-Effect Transistors. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. It acts very similarly to a switch and is used for switching or amplifying electronic signals.

These semiconductor devices are ICs (integrated circuits) which are mounted onto PCBs. MOSFETs come in a range of standard package types such as DPAK, D2PAK, DFN, I2PAK, SOIC, SOT-223 and TO-220.

What are depletion and enhancement modes?

MOSFET transistors have two modes; depletion and enhancement.Depletion MOSFETs work like a closed switch. The current passes through when no current is applied. The current flow will stop if a negative voltage is applied.Enhancement mode MOSFETs are similar to a variable resistor and are generally more popular than the depletion mode MOSFETs. They come in n-channel or p-channel variants.

How do MOSFETs work?

The pins on a MOSFET package are the Source, Gate and Drain. When a voltage is applied between the Gate and the Source terminals, current can pass through from the Drain to the Source pins. When the voltage applied to the Gate changes, the resistance from the Drain to the Source will change too. The lower the voltage applied, the higher the resistance. As the voltage increases, the resistance from the Drain to Source will decrease.Power MOSFETs are similar to standard MOSFETs but they are designed to handle a higher level of power.

N-Channel vs. P-Channel MOSFETs

MOSFETs are made of p-type or n-type doped silicon.

  • N-Channel MOSFETS contain additional electrons which are free to move around. They are the more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.

  • P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the Gate terminal is lower than the Source voltage.

Where are MOSFETs used?

MOSFETs are found within many applications, such as microprocessors and other memory components. MOSFET transistors are most commonly used as a voltage-controlled switch within circuits.

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Description Price Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Package Type Mounting Type Pin Count Maximum Gate Source Voltage Channel Mode Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Power Dissipation Transistor Configuration Number of Elements per Chip
RS Stock No. 891-2869
Mfr. Part No.TK10A60W,S5VX(J
BrandToshiba
MYR6.308
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N 9.7 A 600 V 380 mΩ TO-220SIS Through Hole 3 -30 V, +30 V Enhancement 3.7V - 30 W Single 1
RS Stock No. 168-7961
Mfr. Part No.TK17A65W,S5X(M
BrandToshiba
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N 17 A 650 V 200 mΩ TO-220SIS Through Hole 3 -30 V, +30 V Enhancement 3.5V - 45 W Single 1
RS Stock No. 799-5056
Mfr. Part No.TK17A65W,S5X(M
BrandToshiba
MYR8.282
Each (In a Pack of 5)
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N 17 A 650 V 200 mΩ TO-220SIS Through Hole 3 -30 V, +30 V Enhancement 3.5V - 45 W Single 1
RS Stock No. 891-2914
Mfr. Part No.TK17A65W,S5X(M
BrandToshiba
MYR10.062
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N 17 A 650 V 200 mΩ TO-220SIS Through Hole 3 -30 V, +30 V Enhancement 3.5V - 45 W Single 1
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Mfr. Part No.TK17A65W,S5X(M
BrandToshiba
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N 17 A 650 V 200 mΩ TO-220SIS Through Hole 3 -30 V, +30 V Enhancement 3.5V - 45 W Single 1
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BrandToshiba
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N 5 A 500 V 1.5 Ω DPAK (TO-252) Surface Mount 3 -30 V, +30 V Enhancement 4.4V - 80 W Single 1
RS Stock No. 168-7981
Mfr. Part No.TK42A12N1,S4X(S
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MYR5.108
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N 42 A 120 V 9.4 mΩ TO-220SIS Through Hole 3 -20 V, +20 V Enhancement 4V - 35 W Single 1
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Mfr. Part No.TK42A12N1,S4X(S
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N 42 A 120 V 9.4 mΩ TO-220SIS Through Hole 3 -20 V, +20 V Enhancement 4V - 35 W Single 1
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MYR3.308
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N 42 A 120 V 9.4 mΩ TO-220SIS Through Hole 3 -20 V, +20 V Enhancement 4V - 35 W Single 1
RS Stock No. 890-2686
Mfr. Part No.2SK3564,S5Q(J
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MYR7.18
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N 3 A 900 V 4.3 Ω SC-67 Through Hole 3 -30 V, +30 V Enhancement 4V - 40 W Single 1
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Mfr. Part No.2SK3564,S5Q(J
BrandToshiba
MYR6.494
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N 3 A 900 V 4.3 Ω SC-67 Through Hole 3 -30 V, +30 V Enhancement 4V - 40 W Single 1
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Mfr. Part No.TK6A60D,S5Q(J
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MYR5.964
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Mfr. Part No.TK100L60W,VQ(O
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MYR105.66
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N 100 A 600 V 18 mΩ TO-3PL Through Hole 3 -30 V, +30 V Enhancement 3.7V - 797 W Single 1
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BrandToshiba
MYR5.622
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N 6 A 600 V 1.25 Ω SC-67 Through Hole 3 -30 V, +30 V Enhancement 4V - 40 W Single 1
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Mfr. Part No.2SK3565,S5Q(J
BrandToshiba
MYR8.544
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