Toshiba Type P-Channel MOSFET, 4 A, 30 V Enhancement, 3-Pin SOT-23 SSM3J334R,LF(T
- RS Stock No.:
- 144-5260
- Mfr. Part No.:
- SSM3J334R,LF(T
- Manufacturer:
- Toshiba
Bulk discount available
Subtotal (1 pack of 30 units)*
MYR25.20
FREE delivery for orders over RM 500.00
In Stock
- Plus 330 unit(s) shipping from 05 January 2026
- Plus 2,430 unit(s) shipping from 12 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 30 - 120 | MYR0.84 | MYR25.20 |
| 150 - 270 | MYR0.78 | MYR23.40 |
| 300 - 1470 | MYR0.707 | MYR21.21 |
| 1500 - 2970 | MYR0.647 | MYR19.41 |
| 3000 + | MYR0.596 | MYR17.88 |
*price indicative
- RS Stock No.:
- 144-5260
- Mfr. Part No.:
- SSM3J334R,LF(T
- Manufacturer:
- Toshiba
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 136mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 5.9nC | |
| Maximum Power Dissipation Pd | 2W | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.8 mm | |
| Height | 0.8mm | |
| Length | 2.9mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 136mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 5.9nC | ||
Maximum Power Dissipation Pd 2W | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 1.8 mm | ||
Height 0.8mm | ||
Length 2.9mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
MOSFET P-Channel, SSM3J Series, Toshiba
MOSFET Transistors, Toshiba
Related links
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