Toshiba Type P-Channel MOSFET, 2 A, 60 V, 3-Pin SOT-23 SSM3J356R,LF(T
- RS Stock No.:
- 236-3573
- Mfr. Part No.:
- SSM3J356R,LF(T
- Manufacturer:
- Toshiba
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MYR47.10
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Units | Per Unit | Per Pack* | Saving |
|---|---|---|---|
| 50 - 50 | MYR0.942 | MYR47.10 | - |
| 100 - 200 | MYR0.837 | MYR41.85 | MYR10.50 |
| 250 - 450 | MYR0.821 | MYR41.05 | MYR30.25 |
| 500 - 950 | MYR0.805 | MYR40.25 | MYR68.50 |
| 1000 + | MYR0.753 | MYR37.65 | MYR189.00 |
*price indicative
- RS Stock No.:
- 236-3573
- Mfr. Part No.:
- SSM3J356R,LF(T
- Manufacturer:
- Toshiba
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 400mΩ | |
| Maximum Gate Source Voltage Vgs | -20V | |
| Typical Gate Charge Qg @ Vgs | 8.3nC | |
| Maximum Power Dissipation Pd | 2W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 900mV | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 800μm | |
| Length | 2.4mm | |
| Width | 2.9mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 400mΩ | ||
Maximum Gate Source Voltage Vgs -20V | ||
Typical Gate Charge Qg @ Vgs 8.3nC | ||
Maximum Power Dissipation Pd 2W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 900mV | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 800μm | ||
Length 2.4mm | ||
Width 2.9mm | ||
Automotive Standard No | ||
The Toshiba field effect transistor made up of the silicon material and having P channel MOS type. It is mainly used in power management switching applications.
Storage temperature range −55 to 150 °C
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