Toshiba Type P-Channel MOSFET, 6 A, 12 V, 3-Pin SOT-23 SSM3J338R,LF(T

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Subtotal (1 pack of 50 units)*

MYR454.45

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Units
Per Unit
Per Pack*
50 - 50MYR9.089MYR454.45
100 - 200MYR8.075MYR403.75
250 - 450MYR7.908MYR395.40
500 - 950MYR7.754MYR387.70
1000 +MYR7.267MYR363.35

*price indicative

Packaging Options:
RS Stock No.:
236-3569
Mfr. Part No.:
SSM3J338R,LF(T
Manufacturer:
Toshiba
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Brand

Toshiba

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

12V

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

26.3mΩ

Maximum Gate Source Voltage Vgs

10 V

Typical Gate Charge Qg @ Vgs

19.5nC

Maximum Power Dissipation Pd

2W

Forward Voltage Vf

0.75V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

0.8mm

Standards/Approvals

No

Length

2.4mm

Width

2.9 mm

Automotive Standard

No

The Toshiba field effect transistor MADE up of the silicon material and having P channel MOS type. It is mainly used in power management switching applications.

Storage temperature range −55 to 150 °C

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