N-Channel MOSFET, 3 A, 900 V, 3-Pin SC-67 Toshiba 2SK3564,S5Q(J
- RS Stock No.:
- 890-2686
- Mfr. Part No.:
- 2SK3564,S5Q(J
- Manufacturer:
- Toshiba
Bulk discount available
Subtotal (1 pack of 5 units)**
MYR36.02
Stock check temporarily unavailable - call for stock availability
FREE delivery for orders over MYR700.00
Units | Per Unit | Per Pack** |
|---|---|---|
| 5 - 20 | MYR7.204 | MYR36.02 |
| 25 - 120 | MYR7.054 | MYR35.27 |
| 125 - 245 | MYR6.844 | MYR34.22 |
| 250 - 495 | MYR6.638 | MYR33.19 |
| 500 + | MYR6.438 | MYR32.19 |
**price indicative
- RS Stock No.:
- 890-2686
- Mfr. Part No.:
- 2SK3564,S5Q(J
- Manufacturer:
- Toshiba
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | Toshiba | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 3 A | |
| Maximum Drain Source Voltage | 900 V | |
| Package Type | SC-67 | |
| Series | 2SK | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 4.3 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Maximum Power Dissipation | 40 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Number of Elements per Chip | 1 | |
| Width | 4.5mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 17 nC @ 10 V | |
| Transistor Material | Si | |
| Length | 10mm | |
| Height | 15mm | |
| Forward Diode Voltage | 1.9V | |
Select all | ||
|---|---|---|
Manufacturer Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 3 A | ||
Maximum Drain Source Voltage 900 V | ||
Package Type SC-67 | ||
Series 2SK | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 4.3 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Maximum Power Dissipation 40 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Number of Elements per Chip 1 | ||
Width 4.5mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 17 nC @ 10 V | ||
Transistor Material Si | ||
Length 10mm | ||
Height 15mm | ||
Forward Diode Voltage 1.9V | ||
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