N-Channel MOSFET Transistor, 1.8 A, 200 V, 8-Pin SOP TPC8012-H(Q)
- RS Stock No.:
- 601-5402P
- Mfr. Part No.:
- TPC8012-H(Q)
- Manufacturer:
- Toshiba
This image is representative of the product range
Bulk discount available
Subtotal 50 units (supplied on a continuous strip)*
MYR131.00
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Units | Per Unit |
|---|---|
| 50 - 95 | MYR2.62 |
| 100 - 495 | MYR2.20 |
| 500 - 995 | MYR1.87 |
| 1000 + | MYR1.85 |
*price indicative
- RS Stock No.:
- 601-5402P
- Mfr. Part No.:
- TPC8012-H(Q)
- Manufacturer:
- Toshiba
Specifications
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 1.8 A | |
| Maximum Drain Source Voltage | 200 V | |
| Package Type | SOP | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 400 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation | 1.9 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 11 nC @ 10 V | |
| Length | 5mm | |
| Transistor Material | Si | |
| Width | 4.4mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.5mm | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 1.8 A | ||
Maximum Drain Source Voltage 200 V | ||
Package Type SOP | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 400 mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation 1.9 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 11 nC @ 10 V | ||
Length 5mm | ||
Transistor Material Si | ||
Width 4.4mm | ||
Minimum Operating Temperature -55 °C | ||
Height 1.5mm | ||
- COO (Country of Origin):
- JP