MOSFETs

MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. It acts very similarly to a switch and is used for switching or amplifying electronic signals.

These semiconductor devices are ICs (integrated circuits) which are mounted onto PCBs. MOSFETs come in a range of standard package types such as DPAK, D2PAK, DFN, I2PAK, SOIC, SOT-223 and TO-220. For more information about MOSFETs, please see our complete guide to MOSFETs.

What are depletion and enhancement modes?

MOSFET transistors have two modes; depletion and enhancement. Depletion MOSFETs work like a closed switch. The current passes through when no current is applied. The current flow will stop if a negative voltage is applied. Enhancement mode MOSFETs are like a variable resistor and are generally more popular than the depletion mode MOSFETs. They come in n-channel or p-channel variants.

How do MOSFETs work?

The pins on a MOSFET package are the Source, Gate and Drain. When a voltage is applied between the Gate and the Source terminals, current can pass through from the Drain to the Source pins. When the voltage applied to the Gate changes, the resistance from the Drain to the Source will change too. The lower the voltage applied, the higher the resistance. As the voltage increases, the resistance from the Drain to Source will decrease. Power MOSFETs are like standard MOSFETs but they are designed to handle a higher level of power.

N-Channel vs. P-Channel MOSFETs

N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.

P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the Gate terminal is lower than the Source voltage.


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Description Price Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Package Type Mounting Type Pin Count Maximum Gate Source Voltage Channel Mode Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Power Dissipation Transistor Configuration Number of Elements per Chip
RS Stock No. 542-9434
Mfr. Part No.IRF830APBF
BrandVishay
MYR8.66
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N 5 A 500 V 1.4 Ω TO-220AB Through Hole 3 -30 V, +30 V Enhancement - 2V 74 W Single 1
RS Stock No. 178-0834
Mfr. Part No.IRF830APBF
BrandVishay
MYR4.001
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RS Stock No. 542-9787
Mfr. Part No.IRFP264PBF
BrandVishay
MYR18.52
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N 38 A 250 V 75 mΩ TO-247AC Through Hole 3 -20 V, +20 V Enhancement - 2V 280 W Single 1
RS Stock No. 542-9440
Mfr. Part No.IRF840APBF
BrandVishay
MYR7.44
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N 8 A 500 V 850 mΩ TO-220AB Through Hole 3 -30 V, +30 V Enhancement - 2V 125 W Single 1
RS Stock No. 178-0835
Mfr. Part No.IRF840APBF
BrandVishay
MYR5.166
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RS Stock No. 178-0790
Mfr. Part No.IRFP264PBF
BrandVishay
MYR15.456
Each (In a Tube of 25)
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N 38 A 250 V 75 mΩ TO-247AC Through Hole 3 -20 V, +20 V Enhancement - 2V 280 W Single 1
RS Stock No. 159-6516
Mfr. Part No.IRFP460BPBF
BrandVishay
MYR12.044
Each (In a Tube of 25)
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N 20 A 500 V 250 mΩ TO-247AC Through Hole 3 -20 V, +20 V Enhancement - 2V 278 W Single 1
RS Stock No. 787-9140
Mfr. Part No.IRFP460BPBF
BrandVishay
MYR14.84
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N 20 A 500 V 250 mΩ TO-247AC Through Hole 3 -20 V, +20 V Enhancement - 2V 278 W Single 1
RS Stock No. 919-0288
Mfr. Part No.SI4435DDY-T1-GE3
BrandVishay
MYR1.633
Each (On a Reel of 2500)
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P 8.1 A 30 V 24 mΩ SOIC Surface Mount 8 -20 V, +20 V Enhancement - 1V 2.5 W Single 1
RS Stock No. 710-3339
Mfr. Part No.SI4435DDY-T1-GE3
BrandVishay
MYR2.531
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P 8.1 A 30 V 24 mΩ SOIC Surface Mount 8 -20 V, +20 V Enhancement - 1V 2.5 W Single 1
RS Stock No. 178-0854
Mfr. Part No.IRF620PBF
BrandVishay
MYR2.804
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N 5.2 A 200 V 800 mΩ TO-220AB Through Hole 3 -20 V, +20 V Enhancement - 2V 50 W Single 1
RS Stock No. 543-0052
Mfr. Part No.IRF620PBF
BrandVishay
MYR3.96
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N 5.2 A 200 V 800 mΩ TO-220AB Through Hole 3 -20 V, +20 V Enhancement - 2V 50 W Single 1
RS Stock No. 787-9036
Mfr. Part No.SI2318CDS-T1-GE3
BrandVishay
MYR1.481
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N 5.6 A 40 V 51 mΩ SOT-23 Surface Mount 3 -20 V, +20 V Enhancement - 1.2V 2.1 W Single 1
RS Stock No. 919-4205
Mfr. Part No.SI2318CDS-T1-GE3
BrandVishay
MYR0.835
Each (On a Reel of 3000)
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N 5.6 A 40 V 51 mΩ SOT-23 Surface Mount 3 -20 V, +20 V Enhancement - 1.2V 2.1 W Single 1
RS Stock No. 145-1714
Mfr. Part No.IRF9Z20PBF
BrandVishay
MYR6.426
Each (In a Tube of 50)
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P 6.1 A 50 V 280 mΩ TO-220AB Through Hole 3 -20 V, +20 V Enhancement - 2V 40 W Single 1
RS Stock No. 301-495
Mfr. Part No.IRF840LCPBF
BrandVishay
MYR7.57
Each
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N 8 A 500 V 850 mΩ TO-220AB Through Hole 3 -30 V, +30 V Enhancement - 2V 125 W Single 1
RS Stock No. 815-2682
Mfr. Part No.IRF9Z20PBF
BrandVishay
MYR6.426
Each (In a Pack of 10)
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P 6.1 A 50 V 280 mΩ TO-220AB Through Hole 3 -20 V, +20 V Enhancement - 2V 40 W Single 1
RS Stock No. 919-4400
Mfr. Part No.IRF840LCPBF
BrandVishay
MYR6.174
Each (In a Tube of 50)
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N 8 A 500 V 850 mΩ TO-220AB Through Hole 3 -30 V, +30 V Enhancement - - 125 W Single 1
RS Stock No. 541-2515
Mfr. Part No.IRF9630PBF
BrandVishay
MYR5.17
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P 6.5 A 200 V 800 mΩ TO-220AB Through Hole 3 -20 V, +20 V Enhancement - 2V 74 W Single 1
RS Stock No. 177-7606
Mfr. Part No.IRFL9110TRPBF
BrandVishay
MYR1.358
Each (On a Reel of 2500)
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