- RS Stock No.:
- 787-9140
- Mfr. Part No.:
- IRFP460BPBF
- Manufacturer:
- Vishay
39 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ
80 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ
Added
Price Each
Was MYR16.11
You pay
MYR15.30
Units | Per Unit |
1 - 6 | MYR15.30 |
7 - 12 | MYR14.57 |
13 + | MYR13.64 |
- RS Stock No.:
- 787-9140
- Mfr. Part No.:
- IRFP460BPBF
- Manufacturer:
- Vishay
Technical data sheets
Legislation and Compliance
Product Details
N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor
Vishay D Series Power MOSFETs
FEATURES
• Optimal Design
- Low Area Specific On-Resistance
- Low Input Capacitance (Ciss)
- Reduced Capacitive Switching Losses
- High Body Diode Ruggedness
- Avalanche Energy Rated (UIS)
• Optimal Efficiency and Operation
- Low Cost
- Simple Gate Drive Circuitry
- Low Figure-of-Merit (FOM): Ron x Qg
- Fast Switching
• Optimal Design
- Low Area Specific On-Resistance
- Low Input Capacitance (Ciss)
- Reduced Capacitive Switching Losses
- High Body Diode Ruggedness
- Avalanche Energy Rated (UIS)
• Optimal Efficiency and Operation
- Low Cost
- Simple Gate Drive Circuitry
- Low Figure-of-Merit (FOM): Ron x Qg
- Fast Switching
APPLICATIONS
• Consumer Electronics
- Displays (LCD or Plasma TV)
• Server and Telecom Power Supplies
- SMPS
• Industrial
- Welding
- Induction Heating
- Motor Drives
• Battery Chargers
• SMPS
- Power Factor Correction (PFC)
• Consumer Electronics
- Displays (LCD or Plasma TV)
• Server and Telecom Power Supplies
- SMPS
• Industrial
- Welding
- Induction Heating
- Motor Drives
• Battery Chargers
• SMPS
- Power Factor Correction (PFC)
MOSFET Transistors, Vishay Semiconductor
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 20 A |
Maximum Drain Source Voltage | 500 V |
Series | D Series |
Package Type | TO-247AC |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 250 mΩ |
Channel Mode | Enhancement |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 278 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Number of Elements per Chip | 1 |
Maximum Operating Temperature | +150 °C |
Length | 15.87mm |
Transistor Material | Si |
Width | 5.31mm |
Typical Gate Charge @ Vgs | 85 nC @ 10 V |
Minimum Operating Temperature | -55 °C |
Height | 20.82mm |