Vishay E Series N-Channel MOSFET, 29 A, 600 V, 3-Pin D2PAK SIHB30N60E-GE3

RS Stock No.:: 768-9310
Mfr. Part No.:: SIHB30N60E-GE3
Manufacturer:: Vishay

Vishay E Series N-Channel MOSFET, 29 A, 600 V, 3-Pin D2PAK SIHB30N60E-GE3

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MYR26.38

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Units	Per Unit
1 - 12	MYR26.38
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RS Stock No.:: 768-9310
Mfr. Part No.:: SIHB30N60E-GE3
Manufacturer:: Vishay

SiHB30N60E, E Series Power MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	29 A
Maximum Drain Source Voltage	600 V
Series	E Series
Package Type	D2PAK (TO-263)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	125 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	250 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	85 nC @ 10 V
Number of Elements per Chip	1
Length	10.67mm
Maximum Operating Temperature	+150 °C
Width	9.65mm
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	4.83mm

Vishay E Series N-Channel MOSFET, 29 A, 600 V, 3-Pin D2PAK SIHB30N60E-GE3

FREE delivery for orders over MYR500.00

N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor

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