Vishay N-Channel MOSFET, 5.8 A, 30 V, 3-Pin SOT-23 SI2366DS-T1-GE3

RS Stock No.:: 165-6910
Mfr. Part No.:: SI2366DS-T1-GE3
Manufacturer:: Vishay

Vishay N-Channel MOSFET, 5.8 A, 30 V, 3-Pin SOT-23 SI2366DS-T1-GE3

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Bulk discount available

Subtotal (1 reel of 3000 units)**

MYR2,994.00

3000 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over MYR500.00

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Units	Per Unit	Per Reel**
3000 - 3000	MYR0.998	MYR2,994.00
6000 - 9000	MYR0.976	MYR2,928.00
12000 +	MYR0.958	MYR2,874.00

**price indicative

RS Stock No.:: 165-6910
Mfr. Part No.:: SI2366DS-T1-GE3
Manufacturer:: Vishay

Si2366DS, N-Channel 30V (D-S) MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	5.8 A
Maximum Drain Source Voltage	30 V
Package Type	SOT-23
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	42 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1.2V
Maximum Power Dissipation	2.1 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	1.4mm
Length	3.04mm
Typical Gate Charge @ Vgs	6.4 nC @ 10 V
Number of Elements per Chip	1
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Minimum Operating Temperature	-55 °C
Height	1.02mm

Vishay N-Channel MOSFET, 5.8 A, 30 V, 3-Pin SOT-23 SI2366DS-T1-GE3

FREE delivery for orders over MYR500.00

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor

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