IXYS HiperFET, Polar3 N-Channel MOSFET, 66 A, 600 V, 4-Pin SOT-227 IXFN80N60P3

RS Stock No.:: 804-7603
Distrelec Article No.:: 302-53-380
Mfr. Part No.:: IXFN80N60P3
Manufacturer:: IXYS

IXYS HiperFET, Polar3 N-Channel MOSFET, 66 A, 600 V, 4-Pin SOT-227 IXFN80N60P3

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MYR140.73

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Units	Per Unit
1 - 2	MYR140.73
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RS Stock No.:: 804-7603
Distrelec Article No.:: 302-53-380
Mfr. Part No.:: IXFN80N60P3
Manufacturer:: IXYS

IXFN80N60P3, Polar3 HiPerFET, Power MOSFET, N-Channel Enhancement Mode, Fast Intrinsic Rectifie
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	66 A
Maximum Drain Source Voltage	600 V
Series	HiperFET, Polar3
Package Type	SOT-227B
Mounting Type	Screw Mount
Pin Count	4
Maximum Drain Source Resistance	70 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	960 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Typical Gate Charge @ Vgs	190 nC @ 10 V
Maximum Operating Temperature	+150 °C
Length	38.23mm
Number of Elements per Chip	1
Width	25.07mm
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	9.6mm

IXYS HiperFET, Polar3 N-Channel MOSFET, 66 A, 600 V, 4-Pin SOT-227 IXFN80N60P3

FREE delivery for orders over MYR500.00

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series

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