IXYS HiperFET, Polar N-Channel MOSFET, 53 A, 800 V, 4-Pin SOT-227 IXFN60N80P

RS Stock No.:: 168-4494
Mfr. Part No.:: IXFN60N80P
Manufacturer:: IXYS

IXYS HiperFET, Polar N-Channel MOSFET, 53 A, 800 V, 4-Pin SOT-227 IXFN60N80P

This image is representative of the product range

Subtotal (1 tube of 10 units)**

MYR1,997.90

410 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over MYR500.00

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Units	Per Unit	Per Tube**
10 +	MYR199.79	MYR1,997.90

**price indicative

RS Stock No.:: 168-4494
Mfr. Part No.:: IXFN60N80P
Manufacturer:: IXYS

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	53 A
Maximum Drain Source Voltage	800 V
Package Type	SOT-227
Series	HiperFET, Polar
Mounting Type	Screw Mount
Pin Count	4
Maximum Drain Source Resistance	140 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	1.04 kW
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Number of Elements per Chip	1
Width	25.42mm
Typical Gate Charge @ Vgs	250 nC @ 10 V
Length	38.23mm
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Height	9.6mm
Minimum Operating Temperature	-55 °C

IXYS HiperFET, Polar N-Channel MOSFET, 53 A, 800 V, 4-Pin SOT-227 IXFN60N80P

FREE delivery for orders over MYR500.00

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series

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