IXYS Type N-Channel MOSFET, 61 A, 500 V Enhancement, 4-Pin SOT-227

This image is representative of the product range

Bulk discount available

Subtotal (1 tube of 10 units)*

MYR1,316.74

Add to Basket
Select or type quantity
In Stock
  • 10 unit(s) ready to ship from another location
  • Plus 30 unit(s) shipping from 05 February 2026
  • Plus 10 unit(s) shipping from 07 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
Per Tube*
10 - 10MYR131.674MYR1,316.74
20 - 30MYR129.643MYR1,296.43
40 +MYR127.114MYR1,271.14

*price indicative

RS Stock No.:
920-0789
Mfr. Part No.:
IXFN64N50P
Manufacturer:
IXYS
Find similar products by selecting one or more attributes.
Select all

Brand

IXYS

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

61A

Maximum Drain Source Voltage Vds

500V

Package Type

SOT-227

Mount Type

Panel

Pin Count

4

Maximum Drain Source Resistance Rds

85mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

700W

Typical Gate Charge Qg @ Vgs

150nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.5V

Maximum Operating Temperature

150°C

Length

38.23mm

Standards/Approvals

No

Height

9.6mm

Width

25.42 mm

Automotive Standard

No

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series


N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS


A wide range of advanced discrete Power MOSFET devices from IXYS

Related links