IXYS HiperFET, Polar N-Channel MOSFET, 53 A, 800 V, 4-Pin SOT-227 IXFN60N80P

RS Stock No.:: 194-350
Distrelec Article No.:: 302-53-376
Mfr. Part No.:: IXFN60N80P
Manufacturer:: IXYS

IXYS HiperFET, Polar N-Channel MOSFET, 53 A, 800 V, 4-Pin SOT-227 IXFN60N80P

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MYR206.75

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Units	Per Unit
1 - 2	MYR206.75
3 - 4	MYR206.60
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RS Stock No.:: 194-350
Distrelec Article No.:: 302-53-376
Mfr. Part No.:: IXFN60N80P
Manufacturer:: IXYS

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	53 A
Maximum Drain Source Voltage	800 V
Package Type	SOT-227B
Series	HiperFET, Polar
Mounting Type	Screw Mount
Pin Count	4
Maximum Drain Source Resistance	140 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	1.04 kW
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Transistor Material	Si
Typical Gate Charge @ Vgs	250 nC @ 10 V
Width	25.42mm
Number of Elements per Chip	1
Length	38.23mm
Maximum Operating Temperature	+150 °C
Minimum Operating Temperature	-55 °C
Height	9.6mm

IXYS HiperFET, Polar N-Channel MOSFET, 53 A, 800 V, 4-Pin SOT-227 IXFN60N80P

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N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series

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