IXYS HiperFET, Polar3 N-Channel MOSFET, 66 A, 600 V, 4-Pin SOT-227 IXFN80N60P3

RS Stock No.:: 168-4759
Mfr. Part No.:: IXFN80N60P3
Manufacturer:: IXYS

IXYS HiperFET, Polar3 N-Channel MOSFET, 66 A, 600 V, 4-Pin SOT-227 IXFN80N60P3

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Bulk discount available

Subtotal (1 tube of 10 units)**

MYR1,074.57

250 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over MYR500.00

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Units	Per Unit	Per Tube**
10 - 10	MYR107.457	MYR1,074.57
20 - 30	MYR105.093	MYR1,050.93
40 +	MYR103.16	MYR1,031.60

**price indicative

RS Stock No.:: 168-4759
Mfr. Part No.:: IXFN80N60P3
Manufacturer:: IXYS

IXFN80N60P3, Polar3 HiPerFET, Power MOSFET, N-Channel Enhancement Mode, Fast Intrinsic Rectifie
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	66 A
Maximum Drain Source Voltage	600 V
Package Type	SOT-227
Series	HiperFET, Polar3
Mounting Type	Screw Mount
Pin Count	4
Maximum Drain Source Resistance	70 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	960 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Width	25.07mm
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	190 nC @ 10 V
Transistor Material	Si
Length	38.23mm
Maximum Operating Temperature	+150 °C
Minimum Operating Temperature	-55 °C
Height	9.6mm

IXYS HiperFET, Polar3 N-Channel MOSFET, 66 A, 600 V, 4-Pin SOT-227 IXFN80N60P3

FREE delivery for orders over MYR500.00

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series

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