IXYS Type N-Channel MOSFET, 66 A, 600 V Enhancement, 4-Pin SOT-227 IXFN80N60P3

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Subtotal (1 tube of 10 units)*

MYR1,074.57

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Units
Per Unit
Per Tube*
10 - 10MYR107.457MYR1,074.57
20 - 30MYR105.093MYR1,050.93
40 +MYR103.16MYR1,031.60

*price indicative

RS Stock No.:
168-4759
Mfr. Part No.:
IXFN80N60P3
Manufacturer:
IXYS
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Brand

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

66A

Maximum Drain Source Voltage Vds

600V

Package Type

SOT-227

Mount Type

Panel

Pin Count

4

Maximum Drain Source Resistance Rds

70mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

960W

Forward Voltage Vf

1.5V

Maximum Gate Source Voltage Vgs

30 V

Typical Gate Charge Qg @ Vgs

190nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

9.6mm

Width

25.07 mm

Standards/Approvals

No

Length

38.23mm

Automotive Standard

No

COO (Country of Origin):
US

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