IXYS HiperFET, Polar3 N-Channel MOSFET, 90 A, 600 V, 4-Pin SOT-227 IXFN110N60P3

RS Stock No.:: 804-7596
Distrelec Article No.:: 302-53-359
Mfr. Part No.:: IXFN110N60P3
Manufacturer:: IXYS

IXYS HiperFET, Polar3 N-Channel MOSFET, 90 A, 600 V, 4-Pin SOT-227 IXFN110N60P3

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MYR208.65

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Units	Per Unit
1 - 2	MYR208.65
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RS Stock No.:: 804-7596
Distrelec Article No.:: 302-53-359
Mfr. Part No.:: IXFN110N60P3
Manufacturer:: IXYS

IXFN110N60P3, Polar3 HiPerFET Power MOSFET, N-Channel Enhancement Mode, Avalanche Rated, Fast Intrinsic Rectifier
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	90 A
Maximum Drain Source Voltage	600 V
Package Type	SOT-227B
Series	HiperFET, Polar3
Mounting Type	Screw Mount
Pin Count	4
Maximum Drain Source Resistance	56 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	1.5 kW
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Maximum Operating Temperature	+150 °C
Length	38.23mm
Typical Gate Charge @ Vgs	245 nC @ 10 V
Transistor Material	Si
Number of Elements per Chip	1
Width	25.07mm
Height	9.6mm
Minimum Operating Temperature	-55 °C

IXYS HiperFET, Polar3 N-Channel MOSFET, 90 A, 600 V, 4-Pin SOT-227 IXFN110N60P3

FREE delivery for orders over MYR500.00

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series

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