IXYS HiperFET, Polar3 N-Channel MOSFET, 90 A, 600 V, 4-Pin SOT-227 IXFN110N60P3

RS Stock No.:: 168-4756
Mfr. Part No.:: IXFN110N60P3
Manufacturer:: IXYS

IXYS HiperFET, Polar3 N-Channel MOSFET, 90 A, 600 V, 4-Pin SOT-227 IXFN110N60P3

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Bulk discount available

Subtotal (1 tube of 10 units)**

MYR2,086.50

100 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over MYR500.00

Real time qty checker

Units	Per Unit	Per Tube**
10 - 10	MYR208.65	MYR2,086.50
20 - 30	MYR205.436	MYR2,054.36
40 +	MYR201.431	MYR2,014.31

**price indicative

RS Stock No.:: 168-4756
Mfr. Part No.:: IXFN110N60P3
Manufacturer:: IXYS

IXFN110N60P3, Polar3 HiPerFET Power MOSFET, N-Channel Enhancement Mode, Avalanche Rated, Fast Intrinsic Rectifier
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	90 A
Maximum Drain Source Voltage	600 V
Series	HiperFET, Polar3
Package Type	SOT-227
Mounting Type	Screw Mount
Pin Count	4
Maximum Drain Source Resistance	56 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	1.5 kW
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Number of Elements per Chip	1
Length	38.23mm
Typical Gate Charge @ Vgs	245 nC @ 10 V
Width	25.07mm
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Height	9.6mm
Minimum Operating Temperature	-55 °C

IXYS HiperFET, Polar3 N-Channel MOSFET, 90 A, 600 V, 4-Pin SOT-227 IXFN110N60P3

FREE delivery for orders over MYR500.00

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series

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