IXYS HiperFET, Polar3 N-Channel MOSFET, 192 A, 300 V, 4-Pin SOT-227 IXFN210N30P3

RS Stock No.:: 177-5342
Mfr. Part No.:: IXFN210N30P3
Manufacturer:: IXYS

IXYS HiperFET, Polar3 N-Channel MOSFET, 192 A, 300 V, 4-Pin SOT-227 IXFN210N30P3

This image is representative of the product range

Bulk discount available

Subtotal (1 tube of 10 units)**

MYR1,931.13

240 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over MYR500.00

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Units	Per Unit	Per Tube**
10 - 10	MYR193.113	MYR1,931.13
20 - 30	MYR190.138	MYR1,901.38
40 +	MYR186.432	MYR1,864.32

**price indicative

RS Stock No.:: 177-5342
Mfr. Part No.:: IXFN210N30P3
Manufacturer:: IXYS

IXFN210N30P3, Polar3 HiPerFET Power MOSFET, N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	192 A
Maximum Drain Source Voltage	300 V
Package Type	SOT-227
Series	HiperFET, Polar3
Mounting Type	Screw Mount
Pin Count	4
Maximum Drain Source Resistance	14.5 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	1.5 kW
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	268 nC @ 10 V
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Width	25.07mm
Length	38.23mm
Height	9.6mm
Minimum Operating Temperature	-55 °C

IXYS HiperFET, Polar3 N-Channel MOSFET, 192 A, 300 V, 4-Pin SOT-227 IXFN210N30P3

FREE delivery for orders over MYR500.00

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series

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