IXYS HiperFET, Polar N-Channel MOSFET, 66 A, 500 V, 4-Pin SOT-227 IXFN80N50P

RS Stock No.:: 194-029
Distrelec Article No.:: 302-53-378
Mfr. Part No.:: IXFN80N50P
Manufacturer:: IXYS

IXYS HiperFET, Polar N-Channel MOSFET, 66 A, 500 V, 4-Pin SOT-227 IXFN80N50P

Bulk discount available

Subtotal (1 unit)**

MYR143.48

Temporarily out of stock - back order for despatch 04/04/2026, delivery within 4 working days from despatch date*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over MYR500.00

Units	Per Unit
1 - 4	MYR143.48
5 +	MYR139.17

**price indicative

RS Stock No.:: 194-029
Distrelec Article No.:: 302-53-378
Mfr. Part No.:: IXFN80N50P
Manufacturer:: IXYS

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	66 A
Maximum Drain Source Voltage	500 V
Series	HiperFET, Polar
Package Type	SOT-227B
Mounting Type	Screw Mount
Pin Count	4
Maximum Drain Source Resistance	65 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	700 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	195 nC @ 10 V
Length	38.2mm
Width	25.07mm
Height	9.6mm
Minimum Operating Temperature	-55 °C

IXYS HiperFET, Polar N-Channel MOSFET, 66 A, 500 V, 4-Pin SOT-227 IXFN80N50P

FREE delivery for orders over MYR500.00

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series

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