Vishay Isolated TrenchFET 2 Type N-Channel MOSFET, 6.5 A, 60 V Enhancement, 8-Pin SOIC SI4946BEY-T1-GE3
- RS Stock No.:
- 787-9027
- Mfr. Part No.:
- SI4946BEY-T1-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
MYR32.97
FREE delivery for orders over RM 500.00
Last RS stock
- 35 left, ready to ship from another location
- Final 1,670 unit(s) shipping from 13 January 2026
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 20 | MYR6.594 | MYR32.97 |
| 25 + | MYR6.398 | MYR31.99 |
*price indicative
- RS Stock No.:
- 787-9027
- Mfr. Part No.:
- SI4946BEY-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6.5A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | TrenchFET | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 52mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 17nC | |
| Maximum Power Dissipation Pd | 3.7W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Isolated | |
| Length | 5mm | |
| Width | 4 mm | |
| Standards/Approvals | No | |
| Height | 1.55mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6.5A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series TrenchFET | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 52mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 17nC | ||
Maximum Power Dissipation Pd 3.7W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Isolated | ||
Length 5mm | ||
Width 4 mm | ||
Standards/Approvals No | ||
Height 1.55mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
Dual N-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
- Vishay Isolated TrenchFET 2 Type N-Channel MOSFET 60 V Enhancement, 8-Pin SOIC
- Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET 40 V Enhancement, 8-Pin SOIC
- Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET 40 V Enhancement, 8-Pin SOIC SI4909DY-T1-GE3
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 60 V Enhancement, 8-Pin SO-8 SI4946BEY-T1-E3
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 60 V Enhancement, 8-Pin SO-8
- Vishay Isolated TrenchFET 2 Type N 8 A 8-Pin SOIC
- Vishay Isolated TrenchFET 2 Type P 5.3 A 8-Pin SOIC
- Vishay Isolated TrenchFET 2 Type P 8 A 8-Pin SOIC