Vishay Isolated TrenchFET 2 Type N-Channel Power MOSFET, 7.5 A, 30 V Enhancement, 8-Pin SOIC SI4214DDY-T1-GE3

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Subtotal (1 pack of 5 units)*

MYR17.53

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5 - 620MYR3.506MYR17.53
625 - 1245MYR3.328MYR16.64
1250 +MYR3.162MYR15.81

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Packaging Options:
RS Stock No.:
710-3327
Mfr. Part No.:
SI4214DDY-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

7.5A

Maximum Drain Source Voltage Vds

30V

Package Type

SOIC

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

19.5mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

150°C

Maximum Power Dissipation Pd

2W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

14.5nC

Transistor Configuration

Isolated

Maximum Operating Temperature

-55°C

Height

1.5mm

Length

5mm

Standards/Approvals

No

Width

4 mm

Number of Elements per Chip

2

Automotive Standard

No

COO (Country of Origin):
CN

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