Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET, 4 A, 20 V Enhancement, 8-Pin SOIC SI9933CDY-T1-GE3

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Subtotal (1 pack of 5 units)*

MYR11.12

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Units
Per Unit
Per Pack*
5 - 620MYR2.224MYR11.12
625 - 1245MYR2.114MYR10.57
1250 +MYR2.01MYR10.05

*price indicative

Packaging Options:
RS Stock No.:
710-3395
Mfr. Part No.:
SI9933CDY-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type P

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

4A

Maximum Drain Source Voltage Vds

20V

Package Type

SOIC

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

58mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

12 V

Typical Gate Charge Qg @ Vgs

17nC

Minimum Operating Temperature

150°C

Maximum Power Dissipation Pd

2W

Transistor Configuration

Isolated

Height

1.55mm

Width

4 mm

Standards/Approvals

No

Length

5mm

Number of Elements per Chip

2

Automotive Standard

No

COO (Country of Origin):
CN

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