Dual N/P-Channel-Channel MOSFET, 4.3 A, 4.5 A, 12 V, 6-Pin SOT-363 Vishay SIA517DJ-T1-GE3

RS Stock No.:: 165-7183
Mfr. Part No.:: SIA517DJ-T1-GE3
Manufacturer:: Vishay

Dual N/P-Channel-Channel MOSFET, 4.3 A, 4.5 A, 12 V, 6-Pin SOT-363 Vishay SIA517DJ-T1-GE3

This image is representative of the product range

Bulk discount available

Price Each (On a Reel of 3000)

MYR2.44

Temporarily out of stock - back order for despatch 27/12/2025, delivery within 4 working days from despatch date*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per Unit	Per Reel**
3000 - 3000	MYR2.44	MYR7,320.00
6000 - 9000	MYR2.386	MYR7,158.00
12000 +	MYR2.342	MYR7,026.00

**price indicative

RS Stock No.:: 165-7183
Mfr. Part No.:: SIA517DJ-T1-GE3
Manufacturer:: Vishay

SiA517DJ, N- and P-Channel 12V (D-S) MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	4.3 A, 4.5 A
Maximum Drain Source Voltage	12 V
Package Type	SOT-363
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	65 mΩ, 170 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	0.4V
Maximum Power Dissipation	6.5 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-8 V, +8 V
Number of Elements per Chip	2
Width	2.15mm
Typical Gate Charge @ Vgs	13.1 nC @ 8 V, 9.7 nC @ 8 V
Transistor Material	Si
Length	2.15mm
Maximum Operating Temperature	+150 °C
Height	0.8mm
Minimum Operating Temperature	-55 °C

Dual N/P-Channel-Channel MOSFET, 4.3 A, 4.5 A, 12 V, 6-Pin SOT-363 Vishay SIA517DJ-T1-GE3

Dual N/P-Channel MOSFET, Vishay Semiconductor

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