Vishay Isolated TrenchFET 2 Type P, Type N-Channel MOSFET, 300 mA, 60 V Enhancement, 6-Pin SC-89-6 SI1029X-T1-GE3
- RS Stock No.:
- 787-9055
- Mfr. Part No.:
- SI1029X-T1-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 20 units)*
MYR36.30
FREE delivery for orders over RM 500.00
Last RS stock
- Final 1,560 unit(s), ready to ship from another location
Units | Per Unit | Per Pack* |
|---|---|---|
| 20 - 140 | MYR1.815 | MYR36.30 |
| 160 - 740 | MYR1.761 | MYR35.22 |
| 760 - 1480 | MYR1.707 | MYR34.14 |
| 1500 + | MYR1.67 | MYR33.40 |
*price indicative
- RS Stock No.:
- 787-9055
- Mfr. Part No.:
- SI1029X-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P, Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 300mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SC-89-6 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 8Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 250mW | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 750nC | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Forward Voltage Vf | 1.4V | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 1.7mm | |
| Height | 0.6mm | |
| Width | 1.7 mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P, Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 300mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SC-89-6 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 8Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 250mW | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 750nC | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Forward Voltage Vf 1.4V | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 1.7mm | ||
Height 0.6mm | ||
Width 1.7 mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
Dual N/P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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