Dual N-Channel MOSFET, 1.3 A, 20 V, 6-Pin SOT-363 Vishay SI1922EDH-T1-GE3

RS Stock No.:: 812-3091
Mfr. Part No.:: SI1922EDH-T1-GE3
Manufacturer:: Vishay

Dual N-Channel MOSFET, 1.3 A, 20 V, 6-Pin SOT-363 Vishay SI1922EDH-T1-GE3

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Price Each (In a Pack of 50)

MYR1.529

3050 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*

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Units	Per Unit	Per Pack**
50 - 700	MYR1.529	MYR76.45
750 - 1450	MYR1.453	MYR72.65
1500 +	MYR1.228	MYR61.40

**price indicative

RS Stock No.:: 812-3091
Mfr. Part No.:: SI1922EDH-T1-GE3
Manufacturer:: Vishay

Si1922EDH, Dual N-Channel 20V (D-S) MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	1.3 A
Maximum Drain Source Voltage	20 V
Package Type	SOT-363
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	263 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	0.4V
Maximum Power Dissipation	1.25 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-8 V, +8 V
Number of Elements per Chip	2
Transistor Material	Si
Width	1.35mm
Typical Gate Charge @ Vgs	1.6 nC @ 8 V
Length	2.2mm
Maximum Operating Temperature	+150 °C
Height	1mm
Minimum Operating Temperature	-55 °C

Dual N-Channel MOSFET, 1.3 A, 20 V, 6-Pin SOT-363 Vishay SI1922EDH-T1-GE3

Dual N-Channel MOSFET, Vishay Semiconductor

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