Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET, 2.3 A, 30 V Enhancement, 6-Pin TSOP SI3993CDV-T1-GE3
- RS Stock No.:
- 812-3189
- Mfr. Part No.:
- SI3993CDV-T1-GE3
- Manufacturer:
- Vishay
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MYR38.58
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Units | Per Unit | Per Pack* |
|---|---|---|
| 20 - 740 | MYR1.929 | MYR38.58 |
| 760 - 1480 | MYR1.77 | MYR35.40 |
| 1500 + | MYR1.691 | MYR33.82 |
*price indicative
- RS Stock No.:
- 812-3189
- Mfr. Part No.:
- SI3993CDV-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 2.3A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TSOP | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 188mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 5.2nC | |
| Maximum Power Dissipation Pd | 1.4W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Isolated | |
| Height | 1mm | |
| Standards/Approvals | No | |
| Width | 1.7mm | |
| Length | 3.1mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 2.3A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TSOP | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 188mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 5.2nC | ||
Maximum Power Dissipation Pd 1.4W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Isolated | ||
Height 1mm | ||
Standards/Approvals No | ||
Width 1.7mm | ||
Length 3.1mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay TrenchFET Series Power MOSFET, 30V Maximum Drain Source Voltage, 2.3A Maximum Continuous Drain Current - SI3993CDV-T1-GE3
This power MOSFET is a surface-mount P-channel switching transistor designed for compact, low-power applications. It operates within a modest voltage range and is intended for efficient switching duties where a dual-element, isolated transistor configuration is required. The component is supplied in a slim TSOP package suited to board-level integration in electronic control systems.
Features and Benefits:
• 30V maximum drain voltage enables safe low-voltage switching
• 2.3A continuous drain current supports moderate load currents
• 188mΩ low RDS(on) reduces conduction losses
• 5.2nC typical gate charge affords fast gate switching
• 1.4W power dissipation allows duty-cycled operation
• Isolated dual-element design enables split-channel implementations
• 2.3A continuous drain current supports moderate load currents
• 188mΩ low RDS(on) reduces conduction losses
• 5.2nC typical gate charge affords fast gate switching
• 1.4W power dissipation allows duty-cycled operation
• Isolated dual-element design enables split-channel implementations
Applications
• Suitable for low-voltage motor control in automation modules
• Ideal for power switching in Compact power supplies
• Used for load switching in embedded control systems
• Can be used for polarity control in battery management circuits
• Ideal for power switching in Compact power supplies
• Used for load switching in embedded control systems
• Can be used for polarity control in battery management circuits
What thermal range can be expected during operation?
The device is rated to operate between -55°C and 150°C, allowing use across extended temperature environments.
How does the package support board assembly?
The TSOP surface-mount format with six pins facilitates automated placement and soldering on densely populated boards.
Can the gate handle higher control voltages?
The gate should not exceed 20V maximum to avoid damaging the gate oxide and to maintain specified performance.
Does the device support multi-element configurations on a single chip?
Yes, it contains two elements per chip in an isolated configuration, enabling paired switching arrangements without external isolation.