Essential and Operational Technologies

These cookies make our website work. This includes product images and videos, functionality for the basket, logging in, remembering your username, registration and My Account.

We use optimisation cookies to test new features and designs on our website. The information collected helps us improve our website and our customers' experience.

Advertising

These cookies are used to understand the performance and relevancy of our adverts, to provide you with personalised adverts on other websites and social media, to track when you have arrived at our site from a recognised third-party affiliate website, and to track if you made a purchase based on the adverts we displayed to you.

Recommendations

These cookies enable us to provide personalised product and content recommendations, to make the browsing experience more relevant to you.

Functionality

These cookies are used to offer customer surveys and feedback, to improve search results, and to allow you to share content from our website on social media.

Analytics

These cookies help us improve our website by collecting and reporting information on how you use it.

Units	Per Unit	Per Pack**
20 - 740	MYR2.29	MYR45.80
760 - 1480	MYR2.205	MYR44.10
1500 +	MYR2.185	MYR43.70

Select all	Attribute	Value
	Brand	Vishay
	Channel Type	N, P
	Maximum Continuous Drain Current	4.3 A, 4.5 A
	Maximum Drain Source Voltage	12 V
	Package Type	SOT-363
	Mounting Type	Surface Mount
	Pin Count	6
	Maximum Drain Source Resistance	65 mΩ, 170 mΩ
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	0.4V
	Maximum Power Dissipation	6.5 W
	Transistor Configuration	Isolated
	Maximum Gate Source Voltage	-8 V, +8 V
	Maximum Operating Temperature	+150 °C
	Length	2.15mm
	Number of Elements per Chip	2
	Transistor Material	Si
	Typical Gate Charge @ Vgs	13.1 nC @ 8 V, 9.7 nC @ 8 V
	Width	2.15mm
	Height	0.8mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Vishay
	Channel Type N, P
	Maximum Continuous Drain Current 4.3 A, 4.5 A
	Maximum Drain Source Voltage 12 V
	Package Type SOT-363
	Mounting Type Surface Mount
	Pin Count 6
	Maximum Drain Source Resistance 65 mΩ, 170 mΩ
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 0.4V
	Maximum Power Dissipation 6.5 W
	Transistor Configuration Isolated
	Maximum Gate Source Voltage -8 V, +8 V
	Maximum Operating Temperature +150 °C
	Length 2.15mm
	Number of Elements per Chip 2
	Transistor Material Si
	Typical Gate Charge @ Vgs 13.1 nC @ 8 V, 9.7 nC @ 8 V
	Width 2.15mm
	Height 0.8mm
	Minimum Operating Temperature -55 °C

Vishay Dual N/P-Channel MOSFET, 4.3 A, 4.5 A, 12 V, 6-Pin SOT-363 SIA517DJ-T1-GE3

FREE delivery for orders over MYR500.00

Dual N/P-Channel MOSFET, Vishay Semiconductor

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

Related links