Essential and Operational Technologies

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Units	Per Unit	Per Reel**
3000 - 3000	MYR0.775	MYR2,325.00
6000 - 9000	MYR0.758	MYR2,274.00
12000 +	MYR0.744	MYR2,232.00

Select all	Attribute	Value
	Brand	Vishay
	Channel Type	N
	Maximum Continuous Drain Current	1.3 A
	Maximum Drain Source Voltage	20 V
	Package Type	SOT-363
	Mounting Type	Surface Mount
	Pin Count	6
	Maximum Drain Source Resistance	263 mΩ
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	0.4V
	Maximum Power Dissipation	1.25 W
	Transistor Configuration	Isolated
	Maximum Gate Source Voltage	-8 V, +8 V
	Typical Gate Charge @ Vgs	1.6 nC @ 8 V
	Width	1.35mm
	Length	2.2mm
	Maximum Operating Temperature	+150 °C
	Transistor Material	Si
	Number of Elements per Chip	2
	Height	1mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Vishay
	Channel Type N
	Maximum Continuous Drain Current 1.3 A
	Maximum Drain Source Voltage 20 V
	Package Type SOT-363
	Mounting Type Surface Mount
	Pin Count 6
	Maximum Drain Source Resistance 263 mΩ
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 0.4V
	Maximum Power Dissipation 1.25 W
	Transistor Configuration Isolated
	Maximum Gate Source Voltage -8 V, +8 V
	Typical Gate Charge @ Vgs 1.6 nC @ 8 V
	Width 1.35mm
	Length 2.2mm
	Maximum Operating Temperature +150 °C
	Transistor Material Si
	Number of Elements per Chip 2
	Height 1mm
	Minimum Operating Temperature -55 °C

Vishay Dual N-Channel MOSFET, 1.3 A, 20 V, 6-Pin SOT-363 SI1922EDH-T1-GE3

FREE delivery for orders over MYR500.00

Dual N-Channel MOSFET, Vishay Semiconductor

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

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