Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET, 6.5 A, 40 V Enhancement, 8-Pin SOIC SI4909DY-T1-GE3

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Subtotal (1 pack of 20 units)*

MYR76.38

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Units
Per Unit
Per Pack*
20 - 620MYR3.819MYR76.38
640 - 1240MYR3.51MYR70.20
1260 +MYR3.242MYR64.84

*price indicative

Packaging Options:
RS Stock No.:
818-1302
Mfr. Part No.:
SI4909DY-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

Power MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

6.5A

Maximum Drain Source Voltage Vds

40V

Series

TrenchFET

Package Type

SOIC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

34mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

150°C

Typical Gate Charge Qg @ Vgs

41.5nC

Maximum Power Dissipation Pd

3.2W

Maximum Operating Temperature

-55°C

Transistor Configuration

Isolated

Height

1.55mm

Width

4 mm

Standards/Approvals

No

Length

5mm

Number of Elements per Chip

2

Automotive Standard

No

COO (Country of Origin):
CN

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