Dual P-Channel MOSFET, 6.5 A, 40 V, 8-Pin SOIC Vishay SI4909DY-T1-GE3

RS Stock No.:: 818-1302
Mfr. Part No.:: SI4909DY-T1-GE3
Manufacturer:: Vishay

Dual P-Channel MOSFET, 6.5 A, 40 V, 8-Pin SOIC Vishay SI4909DY-T1-GE3

This image is representative of the product range

Bulk discount available

Price Each (In a Pack of 20)

MYR3.363

5420 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per Unit	Per Pack**
20 - 620	MYR3.363	MYR67.26
640 - 1240	MYR3.091	MYR61.82
1260 +	MYR2.855	MYR57.10

**price indicative

RS Stock No.:: 818-1302
Mfr. Part No.:: SI4909DY-T1-GE3
Manufacturer:: Vishay

Si4909DY, Dual P-Channel 40V (D-S) MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	6.5 A
Maximum Drain Source Voltage	40 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	34 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1.2V
Maximum Power Dissipation	3.2 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	2
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	41.5 nC @ 10 V
Length	5mm
Width	4mm
Transistor Material	Si
Height	1.55mm
Minimum Operating Temperature	-55 °C

Dual P-Channel MOSFET, 6.5 A, 40 V, 8-Pin SOIC Vishay SI4909DY-T1-GE3

Dual P-Channel MOSFET, Vishay Semiconductor

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