Vishay Isolated TrenchFET 2 Type P-Channel MOSFET, 3.1 A, 60 V Enhancement, 8-Pin SOIC SI4948BEY-T1-GE3
- RS Stock No.:
- 787-9008
- Mfr. Part No.:
- SI4948BEY-T1-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
MYR32.16
FREE delivery for orders over RM 500.00
Last RS stock
- Plus 20 unit(s) shipping from 05 January 2026
- Final 2,965 unit(s) shipping from 12 January 2026
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 620 | MYR6.432 | MYR32.16 |
| 625 - 1245 | MYR6.11 | MYR30.55 |
| 1250 + | MYR5.806 | MYR29.03 |
*price indicative
- RS Stock No.:
- 787-9008
- Mfr. Part No.:
- SI4948BEY-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.1A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | TrenchFET | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 150mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 14.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 2.4W | |
| Forward Voltage Vf | -0.8V | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Isolated | |
| Standards/Approvals | No | |
| Width | 4 mm | |
| Height | 1.5mm | |
| Length | 5mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.1A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series TrenchFET | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 150mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 14.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 2.4W | ||
Forward Voltage Vf -0.8V | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Isolated | ||
Standards/Approvals No | ||
Width 4 mm | ||
Height 1.5mm | ||
Length 5mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
Dual P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
- Vishay Isolated TrenchFET 2 Type P-Channel MOSFET 60 V Enhancement, 8-Pin SOIC
- Vishay Isolated TrenchFET 2 Type N 8 A 8-Pin SOIC
- Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET 40 V Enhancement, 8-Pin SOIC
- Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET 20 V Enhancement, 8-Pin SOIC
- Vishay Isolated TrenchFET 2 Type P-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- Vishay Isolated TrenchFET 2 Type N 8 A 8-Pin SOIC SI4564DY-T1-GE3
- Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET 40 V Enhancement, 8-Pin SOIC SI4909DY-T1-GE3
- Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET 20 V Enhancement, 8-Pin SOIC SI9933CDY-T1-GE3