Vishay Isolated TrenchFET 2 Type P, Type N-Channel MOSFET, 6 A, 30 V Enhancement, 8-Pin SOIC SI4532CDY-T1-GE3

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Subtotal (1 pack of 20 units)*

MYR56.08

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Units
Per Unit
Per Pack*
20 - 80MYR2.804MYR56.08
100 +MYR2.719MYR54.38

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Packaging Options:
RS Stock No.:
787-9020
Mfr. Part No.:
SI4532CDY-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type P, Type N

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

30V

Package Type

SOIC

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

140mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

150°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

2.78W

Typical Gate Charge Qg @ Vgs

6nC

Maximum Operating Temperature

-55°C

Transistor Configuration

Isolated

Length

5mm

Width

4 mm

Standards/Approvals

No

Height

1.5mm

Number of Elements per Chip

2

Automotive Standard

No

Dual N/P-Channel MOSFET, Vishay Semiconductor


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