Dual N/P-Channel-Channel MOSFET, 4.3 A, 6 A, 30 V, 8-Pin SOIC Vishay SI4532CDY-T1-GE3

RS Stock No.:: 787-9020
Mfr. Part No.:: SI4532CDY-T1-GE3
Manufacturer:: Vishay

Dual N/P-Channel-Channel MOSFET, 4.3 A, 6 A, 30 V, 8-Pin SOIC Vishay SI4532CDY-T1-GE3

This image is representative of the product range

Bulk discount available

Subtotal (1 pack of 20 units)**

MYR56.08

2240 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over MYR700.00

Units	Per Unit	Per Pack**
20 - 80	MYR2.804	MYR56.08
100 +	MYR2.719	MYR54.38

**price indicative

RS Stock No.:: 787-9020
Mfr. Part No.:: SI4532CDY-T1-GE3
Manufacturer:: Vishay

Si4532CDY, N- and P-Channel 30V (Drain-Source) MOSFET Data Sheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	4.3 A, 6 A
Maximum Drain Source Voltage	30 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	65 mΩ, 140 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	2.78 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	6 nC @ 10 V, 7.8 nC @ 10 V
Number of Elements per Chip	2
Width	4mm
Length	5mm
Transistor Material	Si
Height	1.5mm
Minimum Operating Temperature	-55 °C

Dual N/P-Channel-Channel MOSFET, 4.3 A, 6 A, 30 V, 8-Pin SOIC Vishay SI4532CDY-T1-GE3

FREE delivery for orders over MYR700.00

Dual N/P-Channel MOSFET, Vishay Semiconductor

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