Dual N/P-Channel-Channel MOSFET, 3.9 A, 5.3 A, 60 V, 8-Pin SOIC Vishay SI4559ADY-T1-GE3

RS Stock No.:: 919-0297
Mfr. Part No.:: SI4559ADY-T1-GE3
Manufacturer:: Vishay

Dual N/P-Channel-Channel MOSFET, 3.9 A, 5.3 A, 60 V, 8-Pin SOIC Vishay SI4559ADY-T1-GE3

Bulk discount available

Price Each (On a Reel of 2500)

MYR3.81

4530 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per Unit	Per Reel**
2500 - 2500	MYR3.81	MYR9,525.00
5000 - 7500	MYR3.726	MYR9,315.00
10000 +	MYR3.657	MYR9,142.50

**price indicative

RS Stock No.:: 919-0297
Mfr. Part No.:: SI4559ADY-T1-GE3
Manufacturer:: Vishay

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	3.9 A, 5.3 A
Maximum Drain Source Voltage	60 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	72 mΩ, 150 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	3.1 W, 3.4 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Length	5mm
Width	4mm
Number of Elements per Chip	2
Typical Gate Charge @ Vgs	13 nC @ 30 V, 14.5 nC @ 30 V
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	1.5mm

Dual N/P-Channel-Channel MOSFET, 3.9 A, 5.3 A, 60 V, 8-Pin SOIC Vishay SI4559ADY-T1-GE3

Dual N/P-Channel MOSFET, Vishay Semiconductor