Dual N/P-Channel-Channel MOSFET, 8 A, 40 V, 8-Pin SOIC Vishay SI4554DY-T1-GE3
- RS Stock No.:
- 165-6942
- Mfr. Part No.:
- SI4554DY-T1-GE3
- Manufacturer:
- Vishay
Bulk discount available
Subtotal (1 reel of 2500 units)**
MYR5,215.00
15000 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over MYR700.00
Units | Per Unit | Per Reel** |
---|---|---|
2500 - 2500 | MYR2.086 | MYR5,215.00 |
5000 - 7500 | MYR2.04 | MYR5,100.00 |
10000 + | MYR2.003 | MYR5,007.50 |
**price indicative
- RS Stock No.:
- 165-6942
- Mfr. Part No.:
- SI4554DY-T1-GE3
- Manufacturer:
- Vishay
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Manufacturer | Vishay | |
Channel Type | N, P | |
Maximum Continuous Drain Current | 8 A | |
Maximum Drain Source Voltage | 40 V | |
Package Type | SOIC | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 27 mΩ, 34 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 3.2 W | |
Transistor Configuration | Isolated | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Transistor Material | Si | |
Length | 5mm | |
Number of Elements per Chip | 2 | |
Maximum Operating Temperature | +150 °C | |
Width | 4mm | |
Typical Gate Charge @ Vgs | 13.3 nC @ 10 V, 41.5 nC @ 10 V | |
Height | 1.5mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Manufacturer Vishay | ||
Channel Type N, P | ||
Maximum Continuous Drain Current 8 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type SOIC | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 27 mΩ, 34 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 3.2 W | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Length 5mm | ||
Number of Elements per Chip 2 | ||
Maximum Operating Temperature +150 °C | ||
Width 4mm | ||
Typical Gate Charge @ Vgs 13.3 nC @ 10 V, 41.5 nC @ 10 V | ||
Height 1.5mm | ||
Minimum Operating Temperature -55 °C | ||
Related links
- Dual N/P-Channel-Channel MOSFET 40 V, 8-Pin SOIC Vishay SI4554DY-T1-GE3
- Dual N/P-Channel-Channel MOSFET 8 A 8-Pin SOIC Vishay SI4564DY-T1-GE3
- Dual N/P-Channel-Channel MOSFET 5.3 A 8-Pin SOIC Vishay SI4559ADY-T1-GE3
- Dual N/P-Channel-Channel MOSFET 6.8 A 8-Pin SOIC Vishay SI4599DY-T1-GE3
- Dual N/P-Channel-Channel MOSFET 6 A 8-Pin SOIC Vishay SI4532CDY-T1-GE3
- Dual N/P-Channel-Channel MOSFET 20 V, 8-Pin 1206 ChipFET Vishay...
- Dual N/P-Channel-Channel MOSFET 100 V, 8-Pin PowerPAK 1212-8 Dual...
- Dual N/P-Channel-Channel MOSFET 4.5 A 6-Pin SOT-363 Vishay SIA517DJ-T1-GE3