Dual N/P-Channel-Channel MOSFET, 7.2 A, 8 A, 40 V, 8-Pin SOIC Vishay SI4564DY-T1-GE3

RS Stock No.:: 812-3230
Mfr. Part No.:: SI4564DY-T1-GE3
Manufacturer:: Vishay

Dual N/P-Channel-Channel MOSFET, 7.2 A, 8 A, 40 V, 8-Pin SOIC Vishay SI4564DY-T1-GE3

This image is representative of the product range

Bulk discount available

Price Each (In a Pack of 10)

MYR5.263

33680 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per Unit	Per Pack**
10 - 620	MYR5.263	MYR52.63
630 - 1240	MYR5.00	MYR50.00
1250 +	MYR4.75	MYR47.50

**price indicative

RS Stock No.:: 812-3230
Mfr. Part No.:: SI4564DY-T1-GE3
Manufacturer:: Vishay

Si4564DY, N- and P-Channel 40V (D-S) MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	7.2 A, 8 A
Maximum Drain Source Voltage	40 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	20 mΩ, 28 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	0.8V
Maximum Power Dissipation	3.1 W, 3.2 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, -16 V, +16 V, +20 V
Number of Elements per Chip	2
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Length	5mm
Typical Gate Charge @ Vgs	20.5 nC @ 10 V, 41.5 nC @ 10 V
Width	4mm
Height	1.55mm
Minimum Operating Temperature	-55 °C

Dual N/P-Channel-Channel MOSFET, 7.2 A, 8 A, 40 V, 8-Pin SOIC Vishay SI4564DY-T1-GE3

Dual N/P-Channel MOSFET, Vishay Semiconductor

Related links