Vishay Dual N-Channel MOSFET, 6.5 A, 60 V, 8-Pin SOIC SI4946BEY-T1-GE3

RS Stock No.:: 919-4195
Mfr. Part No.:: SI4946BEY-T1-GE3
Manufacturer:: Vishay

Vishay Dual N-Channel MOSFET, 6.5 A, 60 V, 8-Pin SOIC SI4946BEY-T1-GE3

Subtotal (1 reel of 2500 units)**

MYR9,012.50

Available for back order.*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over MYR500.00

Units	Per Unit	Per Reel**
2500 +	MYR3.605	MYR9,012.50

**price indicative

RS Stock No.:: 919-4195
Mfr. Part No.:: SI4946BEY-T1-GE3
Manufacturer:: Vishay

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	6.5 A
Maximum Drain Source Voltage	60 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	52 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	3.7 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	2
Typical Gate Charge @ Vgs	17 nC @ 10 V
Maximum Operating Temperature	+175 °C
Length	5mm
Width	4mm
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	1.55mm

Vishay Dual N-Channel MOSFET, 6.5 A, 60 V, 8-Pin SOIC SI4946BEY-T1-GE3

FREE delivery for orders over MYR500.00

Dual N-Channel MOSFET, Vishay Semiconductor

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