Vishay TrenchFET P-Channel MOSFET, -3.1 A, -20 V Enhancement, 3-Pin SOT-23 SI2301HDS-T1-GE3

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Subtotal (1 unit)*

MYR0.78

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Units
Per Unit
1 - 24MYR0.78
25 - 99MYR0.52
100 - 499MYR0.39
500 +MYR0.26

*price indicative

RS Stock No.:
735-212
Mfr. Part No.:
SI2301HDS-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

P-Channel

Product Type

MOSFET

Maximum Continuous Drain Current Id

-3.1A

Maximum Drain Source Voltage Vds

-20V

Package Type

SOT-23

Series

TrenchFET

Mount Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance Rds

0.142Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±8 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

1.6W

Typical Gate Charge Qg @ Vgs

5.5nC

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS Compliant

Automotive Standard

No

COO (Country of Origin):
IL

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