N-Channel MOSFET, 132 A, 500 V, 3-Pin PLUS264 IXYS IXFB132N50P3

RS Stock No.:: 802-4348
Mfr. Part No.:: IXFB132N50P3
Manufacturer:: IXYS

N-Channel MOSFET, 132 A, 500 V, 3-Pin PLUS264 IXYS IXFB132N50P3

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33 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ

Price Each

MYR120.25

Units	Per Unit
1 - 12	MYR120.25
13 +	MYR116.65

RS Stock No.:: 802-4348
Mfr. Part No.:: IXFB132N50P3
Manufacturer:: IXYS

IXFB132N50P3, Polar3 HiperFET, Power MOSFET, N-Channel Enhancement Mode, Avalanche Rated, Fast Intrinsic Rectifier
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	132 A
Maximum Drain Source Voltage	500 V
Package Type	PLUS264
Series	HiperFET, Polar3
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	39 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	1.89 kW
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Number of Elements per Chip	1
Transistor Material	Si
Width	5.31mm
Length	20.29mm
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	250 nC @ 10 V
Height	26.59mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 132 A, 500 V, 3-Pin PLUS264 IXYS IXFB132N50P3

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series