N-Channel MOSFET, 110 A, 600 V, 3-Pin PLUS264 IXYS IXFB110N60P3

RS Stock No.:: 168-4726
Mfr. Part No.:: IXFB110N60P3
Manufacturer:: IXYS

N-Channel MOSFET, 110 A, 600 V, 3-Pin PLUS264 IXYS IXFB110N60P3

This image is representative of the product range

Available for back order.

Price Each (In a Tube of 25)

MYR141.592

Units	Per Unit	Per Tube*
25 +	MYR141.592	MYR3,539.80

*price indicative

RS Stock No.:: 168-4726
Mfr. Part No.:: IXFB110N60P3
Manufacturer:: IXYS

IXFB110N60P3, Polar3 HiperFET, Power MOSFET, N-Channel Enhancement Mode, Avalanche Rated, Fast Intrinsic Rectifier
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	110 A
Maximum Drain Source Voltage	600 V
Series	HiperFET, Polar3
Package Type	PLUS264
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	56 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	1.89 kW
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Length	20.29mm
Typical Gate Charge @ Vgs	245 nC @ 10 V
Width	5.31mm
Height	26.59mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 110 A, 600 V, 3-Pin PLUS264 IXYS IXFB110N60P3

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series