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MOSFETs
N-Channel MOSFET, 110 A, 600 V, 3-Pin PLUS264 IXYS IXFB110N60P3
RS Stock No.:
802-4344
Mfr. Part No.:
IXFB110N60P3
Manufacturer:
IXYS
This image is representative of the product range
View all MOSFETs
Available for back order.
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Price Each
MYR114.14
Units
Per Unit
1 - 6
MYR114.14
7 - 12
MYR112.61
13 +
MYR106.96
Packaging Options:
Standard Pack
Production Pack
RS Stock No.:
802-4344
Mfr. Part No.:
IXFB110N60P3
Manufacturer:
IXYS
Technical data sheets
Legislation and Compliance
Product Details
Specifications
IXFB110N60P3, Polar3 HiperFET, Power MOSFET, N-Channel Enhancement Mode, Avalanche Rated, Fast Intrinsic Rectifier
ESD Control Selection Guide V1
RoHS Certificate of Compliance
Statement of conformity
N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series
A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Attribute
Value
Channel Type
N
Maximum Continuous Drain Current
110 A
Maximum Drain Source Voltage
600 V
Package Type
PLUS264
Series
HiperFET, Polar3
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
56 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
1.89 kW
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Width
5.31mm
Typical Gate Charge @ Vgs
245 nC @ 10 V
Length
20.29mm
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Height
26.59mm
Minimum Operating Temperature
-55 °C
