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    N-Channel MOSFET, 1.3 A, 100 V, 4-Pin HVMDIP Vishay IRFD120PBF

    This image is representative of the product range

    Bulk discount available

    Subtotal (1 unit)**

    MYR4.13

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    171 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*

    * Delivery dates may change based on your chosen quantity and delivery address.

    Units
    Per Unit
    1 - 24MYR4.13
    25 - 49MYR4.06
    50 +MYR3.99

    **price indicative

    RS Stock No.:
    541-1691
    Mfr. Part No.:
    IRFD120PBF
    Manufacturer:
    Vishay
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    Manufacturer

    Vishay

    Channel Type

    N

    Maximum Continuous Drain Current

    1.3 A

    Maximum Drain Source Voltage

    100 V

    Package Type

    HVMDIP

    Mounting Type

    Through Hole

    Pin Count

    4

    Maximum Drain Source Resistance

    270 mΩ

    Channel Mode

    Enhancement

    Minimum Gate Threshold Voltage

    2V

    Maximum Power Dissipation

    1.3 W

    Transistor Configuration

    Single

    Maximum Gate Source Voltage

    -20 V, +20 V

    Width

    6.29mm

    Maximum Operating Temperature

    +175 °C

    Number of Elements per Chip

    1

    Typical Gate Charge @ Vgs

    16 nC @ 10 V

    Transistor Material

    Si

    Length

    5mm

    Height

    3.37mm

    Minimum Operating Temperature

    -55 °C

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